Elucidation and control of nanoionics phenomena at oxide/metal heterointerfaces

• Project/Area Number: 24360278
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: National Institute for Materials Science
• Principal Investigator: Tsuruoka Tohru 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主幹研究員 (20271992)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000); Fiscal Year 2014: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000); Fiscal Year 2013: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000); Fiscal Year 2012: ¥9,880,000 (Direct Cost: ¥7,600,000、Indirect Cost: ¥2,280,000)
• Keywords: 酸化物 / カチオン伝導 / 酸化還元反応 / ナノイオニクス / 量子化コンダクタンス / シナプス動作 / 抵抗変化メモリ / 原子スイッチ / 吸湿挙動 / アモルファス酸化物 / 金属イオン伝導 / 抵抗変化メモリー / ヘテロ界面

Outline of Final Research Achievements

We have investigated the switching mechanism and functionalities of Cu,Ag/Ta2O5/Pt atomic switch-type resistance change memories based on the transport of metal ions in oxide thin films and electrochemical reactions at metal/oxide interfaces, which are called ‘nanoionics phenomena’. We performed real-space observation of a conducting filament formed in the memory by atomic force and transmission electron microscopies, elucidation of detailed redox reaction at metal/oxide interfaces and moisture absorption effects of oxides by electrochemical methods, and demonstration of conductance quantization and synaptic behavior.

Research Products

• [Int'l Joint Research] アーヘン工科大学(ドイツ)
• [Journal Article] Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structures (2016)
  • Author(s): T. Tsuruoka, I. Valov, C. Mannequin, T. Hasegawa, R. Waser, M. Aono
  • Journal Title: Japanese Journal of Applied Physics Volume: 55
  • NAID: 210000146651
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Composition of thin Ta2O5 films deposited by different methods and the effect of humidity on their resistive switching behavior (2016)
  • Author(s): C. Mannequin, T. Tsuruoka, T. Hasegawa, M. Aono
  • Journal Title: Japanese Journal of Applied Physics Volume: 55
  • NAID: 210000146630
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Identification and role of non-stoichiometric oxygen in amorphous Ta2O5 thin films deposited by electron beam and sputtering processes (2016)
  • Author(s): C. Mannequin, T. Tsuruoka, T. Hasegawa, M. Aono
  • Journal Title: Applied Surface Science Volume: 印刷中
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Redox reactions at Cu,Ag/Ta2O5 interfaces and the effects of Ta2O5 film density on the forming process in atomic switch structures (2015)
  • Author(s): T. Tsuruoka, I. Valov, S. Tappertzhofen, J. van de Hurk, T. Hasegawa, R. Waser, M. Aono
  • Journal Title: Advanced Functional Materials Volume: 25 Issue: 40 Pages: 6347-6381
  • DOI: 10.1002/adfm.201500853
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch (2015)
  • Author(s): Q. Wang, Y. Itoh, T. Tsuruoka, M. Aono, T. Hasegawa
  • Journal Title: Advanced Materials Volume: 27 Issue: 39 Pages: 6029-6033
  • DOI: 10.1002/adma.201502678
  • Peer Reviewed
• [Journal Article] Position detection and observation of a conducting filament hidden under a top electrode in a Ta2O5-based atomic switch (2015)
  • Author(s): A. Nayak, Q. WANG, Y. Itoh, T. Tsuruoka, T. Hasegawa, L. Boodhoo, H. Mizuta, M. Aono
  • Journal Title: Nanotechnology Volume: 26 Issue: 14 Pages: 145702-145702
  • DOI: 10.1088/0957-4484/26/14/145702
  • Peer Reviewed
• [Journal Article] Dynamic moderation of an electric field using a SiO2 switching layer in TaOx-based ReRAM (2015)
  • Author(s): Q. WANG, Y. Itoh, T. Tsuruoka, Shintaro Otsuka, Tomohiro Shimizu, Shoso Shinguhara, T. Hasegawa, M. Aono
  • Journal Title: Phys. Status Solidi-Rapid Res. Lett. Volume: 9 Issue: 3 Pages: 166-170
  • DOI: 10.1002/pssr.201409531
  • Peer Reviewed
• [Journal Article] Nanosecond fast switching processes observed in gapless-type, Ta2O5-based atomic switches (2015)
  • Author(s): T. Tsuruoka, T. Hasegawa, and M. Aono
  • Journal Title: Mater. Res. Symp. Proc. Volume: 1729 Pages: 1-6
  • DOI: 10.1557/opl.2015.93
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Two types of on-state observed in the operation of a redox-based three-terminal device (2014)
  • Author(s): Q. WANG, Y. Itoh, T. Tsuruoka, T. Hasegawa, S. Watanabe, S. Yamaguchi, T. Hiramoto, M. Aono
  • Journal Title: Key Eng. Mater. Volume: 596 Pages: 111-115
  • DOI: 10.4028/www.scientific.net/kem.596.111
  • Peer Reviewed
• [Journal Article] Synaptic plasticity and memristive behavior operated by atomic switches (2014)
  • Author(s): T. Tsuruoka, T. Hasegawa, and M. Aono
  • Journal Title: Proceedings of 4th Memristor and Memristive Symposium Volume: 2014 Pages: 1455-1455
  • DOI: 10.1109/cnna.2014.6888615
  • Acknowledgement Compliant
• [Journal Article] 酸化物ナノ薄膜を用いた原子スイッチ型抵抗変化メモリーとその応用 (2014)
  • Author(s): 鶴岡徹，長谷川剛
  • Journal Title: 応用物理学会 シリコンテクノロジー分科会 第173回研究集会 電子情報通信学会技術研究報告 Volume: 114 Pages: 85-90
• [Journal Article] Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta2O5 atomic switch (2013)
  • Author(s): T. Tsuruoka, T. Hasegawa, K. Terabe, and M. Aono
  • Journal Title: Mater. Res. Soc. Symp. Proc. Volume: 1562 Pages: 725-725
  • DOI: 10.1557/opl.2013.725
  • Peer Reviewed
• [Journal Article] Generic relevance of counter charges for cation-based nanoscale resistive switching memories (2013)
  • Author(s): S. Tappertzhofen, I. Valov, T. Tsuruoka, T. Hasegawa, R. Waser, and M. Aono
  • Journal Title: ACS Nano Volume: 7 Issue: 7 Pages: 6396-6402
  • DOI: 10.1021/nn4026614
  • Peer Reviewed
• [Journal Article] Volatile and nonvolatile selective switching of a photo-assisted initialized atomic switch (2013)
  • Author(s): 日野貴美、長谷川剛、田中啓文、鶴岡徹、寺部一弥、小川琢治、青野正和
  • Journal Title: NANOTECHNOLOGY Volume: 24 Issue: 38 Pages: 384006-384006
  • DOI: 10.1088/0957-4484/24/38/384006
  • Peer Reviewed
• [Journal Article] Synaptic plasticity and memory functions achieved in WO3-x-based nanoionics device by using principle of atomic switch operation (2013)
  • Author(s): R. Yang, K. Terabe, Y. Yao, T. Tsuruoka, T. Hasegawa, J. K. Gimzewski, and M. Aono
  • Journal Title: Nanotechnology Volume: 24 Issue: 38 Pages: 384003-384003
  • DOI: 10.1088/0957-4484/24/38/384003
  • Peer Reviewed
• [Journal Article] Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5-x/Pt,Pt structure (2013)
  • Author(s): Q. Wang, Y. Itoh, T. Hasegawa, T. Tsuruoka, S. Watanabe, S. Yamaguchi, and M. Aono
  • Journal Title: Appl. Phys. Lett. Volume: 102 Issue: 23 Pages: 233508-233508
  • DOI: 10.1063/1.4811122
  • Peer Reviewed
• [Journal Article] Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta_2O5 atomic switch (2013)
  • Author(s): T. Tsuruoka, T. Hasegawa, I. Valov, R. Waser, M. Aono
  • Journal Title: AIP Advances Volume: 3 Issue: 3 Pages: 32114-32114
  • DOI: 10.1063/1.4795140
  • Peer Reviewed
• [Journal Article] Controlling the synaptic plasticity of a Cu_2S atomic switch (2012)
  • Author(s): A. Nayak, T. Ohno, T. Tsuruoka, K. Terabe, M. Aono
  • Journal Title: Advanced Functional Materials Volume: 22 Issue: 17 Pages: 3606-3613
  • DOI: 10.1002/adfm.201200640
  • Peer Reviewed
• [Journal Article] Conductance quantization and synaptic behavior of a Ta_2O_5-based atomic switch (2012)
  • Author(s): T. Tsuruoka, T. Hasegawa, K.Terabe, M. Aono
  • Journal Title: Nanotechnology Volume: 23 Issue: 43 Pages: 435705-435705
  • DOI: 10.1088/0957-4484/23/43/435705
  • Peer Reviewed
• [Journal Article] Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta_2O_5-based atomic switch (2012)
  • Author(s): T. Tsuruoka, T. Hasegawa, K.Terabe, M. Aono
  • Journal Title: Mater. Res. Soc. Symp. Proc. Volume: 1430 Pages: 901-901
  • DOI: 10.1557/opl.2012.901
  • Peer Reviewed
• [Presentation] Cu/Ta2O5界面の酸化還元反応と抵抗スイッチ動作の湿度依存性 (2016)
  • Author(s): 鶴岡徹, Cedric Mannequin, 長谷川剛, 青野正和
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2016-03-19
• [Presentation] Effects of the composition of Ta2O5 films on the resistive switching properties of Ta2O5 based atomic switches (2016)
  • Author(s): C.R. Mannequin, T. Tsuruoka, T. HASEGAWA, M. Aono
  • Organizer: MANA International Symposium 2016
  • Place of Presentation: つくば
  • Year and Date: 2016-03-09
  • Int'l Joint Research
• [Presentation] Structural property of amorphous thin Ta2O5 films deposited by different methods and its impact on their resistive switching characteristics (2015)
  • Author(s): C.R. Mannequin, T. Tsuruoka, T. Hasegawa, M. Aono
  • Organizer: MNC 2015
  • Place of Presentation: 富山
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] Redox reactions and metal ion transport in Cu(Ag)/Ta2O5/Pt atomic switch structures (2015)
  • Author(s): T. Tsuruoka, Ilia Valov, T. Hasegawa, R. Waser, M. Aono
  • Organizer: MNC 2015
  • Place of Presentation: 富山
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] Impact of Film Morphology on the Switching Characteristics of Ta2O5-Based Atomic Switches (2015)
  • Author(s): C.R. Mannequin, T. Tsuruoka, T. Hasegawa, M. Aono
  • Organizer: SSDM 2015
  • Place of Presentation: 北海道
  • Year and Date: 2015-09-27
  • Int'l Joint Research
• [Presentation] Operation Mechanism and Novel Functions of gapless-type atomic switches based on metal oxide and polymer thin films (2015)
  • Author(s): T. Tsuruoka, C.R. Mannequin, K. Krishnan, M. Aono
  • Organizer: Trend in Nanotechnology 2015
  • Place of Presentation: フランス，トゥールーズ
  • Year and Date: 2015-09-07
  • Int'l Joint Research / Invited
• [Presentation] 原子スイッチ型抵抗変化メモリ：動作機構解明と機能探索 (2015)
  • Author(s): 鶴岡徹
  • Organizer: 第99回STRJ-ERD会合
  • Place of Presentation: 東京
  • Year and Date: 2015-06-26
  • Invited
• [Presentation] Effects of the Oxide Film Density on the Resistive Switching Characteristics of Atomic Switches (2015)
  • Author(s): MANNEQUIN Cedric, 鶴岡徹, 長谷川剛, 青野正和
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Nanosecond Fast Switching Processes Observed in Gapless-Type Ta2O5–Based Atomic Switches (2014)
  • Author(s): T. Tsuruoka, T. Hasegawa, M. Aono
  • Organizer: 2014 MRS Fall Meeting & Exhibit
  • Place of Presentation: Hynes Convention Center, Boston
  • Year and Date: 2014-11-30 – 2014-12-05
• [Presentation] Cu(Ag)/Ta2O5界面の酸化還元過程とフォーミングに対するTa2O5膜密度の影響 (2014)
  • Author(s): 鶴岡徹, Ilia Valov, 長谷川剛, Rainer Waser, 青野正和
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Synaptic plasticity and memristive behavior operated by atomic switches (2014)
  • Author(s): T. Tsuruoka, T. Hasegawa, and M. Aono
  • Organizer: 4th Memristor and Memristive Symposium
  • Place of Presentation: University of Notre Dome
  • Year and Date: 2014-07-28 – 2014-07-31
  • Invited
• [Presentation] 酸化物ナノ薄膜を用いた原子スイッチ型抵抗変化メモリーとその応用 (2014)
  • Author(s): 鶴岡徹，長谷川剛
  • Organizer: シリコンテクノロジー分科会 第173回研究集会
  • Place of Presentation: 名古屋大学
  • Year and Date: 2014-06-19
  • Invited
• [Presentation] Synaptic plasticity observed in a gapless-type atomic switch using a thin Ta2O5 film (2014)
  • Author(s): T. Tsuruoka, T. Hasegawa, K. Terabe, M. Aono
  • Organizer: IUMRS-ICEM 2014
  • Place of Presentation: Taipei
  • Year and Date: 2014-06-10 – 2014-06-14
• [Presentation] Atomic switch: Resistance change memory based on cation transport and redox reactions in oxide thin layers (2014)
  • Author(s): T. Tsuruoka, T. Hasegawa, K. Terabe, and M. Aono
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
  • Invited
• [Presentation] Cu-Ta2O5原子スイッチにおけるSET動作の律速過程 (2014)
  • Author(s): 鶴岡徹，長谷川剛，I. Valov，R. Waser，青野正和
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
• [Presentation] Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta2O5 atomic switch (2013)
  • Author(s): Tsuruoka, T. Hasegawa, K. Terabe, and M. Aono
  • Organizer: 2013 MRS Spring Meeting
  • Place of Presentation: サンフランシスコ
• [Presentation] Controlling the synaptic plasticity of gap- and gapless-type atomic switches (2013)
  • Author(s): T. Tsuruoka
  • Organizer: Discussion Workshop on New Horizons in Electrochemistry
  • Place of Presentation: カプリ島
  • Invited
• [Presentation] Ag/Ta_2O_5/Pt構造における量子化コンダクタンスとシナプス的な振る舞い (2012)
  • Author(s): 鶴岡徹, 長谷川剛, 寺部一弥, 青野正和
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 松山市
  • Year and Date: 2012-09-14
• [Presentation] Resistive switching memory based on nanoscale cation transport in oxide films (2012)
  • Author(s): T. Tsuruoka, T. Hasegawa, K.Terabe, M. Aono
  • Organizer: Collaborative Conference on Materials Research (CCMR) 2012
  • Place of Presentation: ソウル(招待講演)
  • Year and Date: 2012-06-25
• [Presentation] Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta_2O_5-based atomic switch (2012)
  • Author(s): T. Tsuruoka, T. Hasegawa, K.Terabe, M. Aono
  • Organizer: 2012 MRS Spring Meeting
  • Place of Presentation: サンフランシスコ
  • Year and Date: 2012-04-11
• [Remarks]
  • URL: http://samurai.nims.go.jp/TSURUOKA_Touru-j.html