| Project/Area Number |
24360302
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
NOSE Kenji 東京大学, 生産技術研究所, 助教 (10451882)
KAMIKO Masao 東京大学, 生産技術研究所, 助教 (80334366)
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| Research Collaborator |
ODA Nobuhiko
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2014: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2012: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
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| Keywords | 酸化スズ / 透明導電膜 / 光透過性 / 電気伝導性 |
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| Outline of Final Research Achievements |
SnO2:Nb transparent conductive films were successfully deposited by PLD method of SnO:Nb epitaxial film and post- annealing. Therefore, taking advantage of this achievement, we tried to fabricated the hole conductivity of the SnO2 film by the N-doping.
For this purpose, at first, we have developed a new deposition technique named as “a plasma-assisted laser ablation method”, that is, the PLD method overlapped with the plasma circumstances, in order to prevent the detachment of the dope N in the films. Then, using the plasma-assisted laser ablation method and SnO2 seed layer, we tried to deposit SnO2:N films. Consequently, although we have succeeded in obtaining a highly crystalline SnO2:N thin film, these films, indicates all n-type conductivity. Unfortunately, we could not obtain a p-type conductive layer. This might be because oxygen vacancies were increased by nitrogen doping.
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