Seeking innovative alloy elements for development of low-temperature and high-reliability Cu-alloy interconnects and electrodes with reducing process temperature
| Project/Area Number |
24360307
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Osaka University |
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Principal Investigator |
ITO KAZUHIRO 大阪大学, 接合科学研究所, 教授 (60303856)
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| Co-Investigator(Kenkyū-buntansha) |
KOHAMA Kazuyuki 大阪大学, 接合科学研究所, 助教 (00710287)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2014: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2013: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2012: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
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| Keywords | Cu配線 / 熱処理 / Cu(Mg) / Cu(Ti) / 抵抗率 / 密着性 / 接触抵抗 / IGZO / Cu合金膜 / マグネシウム / チタン / ITO |
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| Outline of Final Research Achievements |
For development of high-performance electronic devices, not only seeking innovative semiconductors but also reduction of energy consumption at metal interconnects and electrode/TFT interfaces is essential. In LCDs and touch panels, copper is one of candidate materials for the purpose, but there is Cu-related issues to be overcome such as poor adhesion to glass substrates. We have successfully prepared low-resistivity and excellent-adhesion Cu interconnects on glass substrates using Cu(Mg) alloy films. Mg as the selected alloy element can reduce the process temperature and time to lower than 300°C within 30 min. In addition, for development of high-performance IGZO-TFT devices with ITO/Cu(M)/IGZO contact junctions, contact resistance of Cu(Ti)/ITO and Cu(Ti)/IGZO, and their interface microstructure were investigated. At the interface, Ti in the alloy elements could form the amorphous TiOx reaction layer which exhibited p-type semiconducting properties, leading low contact resistance.
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Report
(4 results)
Research Products
(22 results)
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[Presentation] Reduction of Contact Resistance for Cu(Ti)/IGZO Junction2014
Author(s)
K. Ito, K. Kohama, T. Sano, T. Nabatame and A. Ohi
Organizer
The 5th Int. Symp. on Adv. Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (AMDI-5) Conjunction with 6th IBB Frontier Symp.
Place of Presentation
東京医科歯科大学, 東京都
Year and Date
2014-11-19
Related Report
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