| Budget Amount *help |
¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2012: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Outline of Final Research Achievements |
To realize next-generation semiconductor devices with an atomic scale, we developed room-temperature (RT) atomic layer deposition of HfO2, TiO2 and Al2O3 that might allow the minimum thermal budget in the LSI fabrication. In the course of the research, we directly observed fundamental reactions of source gas adsorption and oxidation. It was found that metal organic precursors of TEMAH, TDMAT and TMA are possible to adsorb on the hydroxylated oxide surfaces even at RT, whereas the plasma excited water and oxygen is effective in oxidizing the precursor saturated surface with the OH termination. The reaction models of the RT ALD were proposed in this study.
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