Investigation of electronic structure and interaction of phosphorous incorporated in the Si(100) surface
| Project/Area Number |
24510160
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
SAGISAKA Keisuke 独立行政法人物質・材料研究機構, 極限計測ユニット, 主任研究員 (70421401)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | ドーパント / シリコン / 走査型トンネル顕微鏡 / 第一原理計算 / 走査トンネル分光 / トンネル分光 |
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| Outline of Final Research Achievements |
Phosphorous-silicon heterodimer incorporated in the Si(100) surface was investigated by means of scanning tunneling microscopy (STM) and density functional theory (DFT). A comparison between experimental and simulated STM images obtained with various sample biases determined the structure of the P-Si heterodimer: The P atom is buckled down to the surface while the Si atom is buckled up to vacuum. This result rejects the previously suggested structure of the P-Si heterodimer. Scanning tunneling spectroscopy and DFT calculation revealed an intense density of state around the Fermi level and this state causes the bright feature of the P-Si heterodimer in the STM images. Furthermore, we found a candidate associated with phosphorous in an STM observation, which is predicted by DFT to bear a spin polarized charge density near the Fermi level. This will be experimentally investigated in the future.
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Report
(4 results)
Research Products
(5 results)
