Fabrication of the flexible TFT using the atmospheric pressure PCVD growth nanotube and demonstration of MSI .

• Project/Area Number: 24510177
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Microdevices/Nanodevices
• Research Institution: Nagoya University
• Principal Investigator: KISHIMOTO Shigeru 名古屋大学, 工学(系)研究科(研究院), 助教 (10186215)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: カーボンナノチューブ / 薄膜トランジスタ / 大気圧プラズマ / フレキシブルデバイス / 集積回路 / 国際情報交換

Outline of Final Research Achievements

I developed atmospheric pressure plasma enhanced CVD system, the carbon nanotubes grown by atmospheric pressure has been demonstrated that operating as a thin film transistor. The system shown from electrical characteristics to be able to depositing CNT in large area. By producing a flexible integrated circuit on a plastic substrate in a simple transfer method using polyvinyl alcohol, and to demonstrate the operation of the ring oscillator delay time 1.1 μsec.

Research Products

• [Journal Article] Fabrication of Thin-Film Transistor Integrated Circuits on Flexible Substrate by Transfer Technique of Carbon Nanotube Network Using Poly(vinyl alcohol). (2013)
  • Author(s): Satoshi Ishii, Mamoru Nishu, Shigeru Kishimoto, and Takashi Mizutani
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Pages: 108001-108001
  • NAID: 40022768299
  • Peer Reviewed
• [Journal Article] Effects of graphene thickness on the electrical properties of carbon (2013)
  • Author(s): Masato Tamaoki, Shigeru Kishimoto, and Takashi Mizutani
  • Journal Title: Applied Physics Letters Volume: 103 Pages: 33120-33120
  • Peer Reviewed
• [Journal Article] Conduction-Type Control of Carbon Nanotube Field-Effect Transistors byTi and Pd Overlayer (2013)
  • Author(s): S. Ishii, M. Tamaoki, S. Kishimoto, and T. Mizutani
  • Journal Title: Jpn. J. Appl. Phys. Volume: 52, 035203 Issue: 3R Pages: 1-4
  • DOI: 10.7567/jjap.52.035203
  • Peer Reviewed
• [Journal Article] Electrical properties of the graphitic carbon contacts on carbon nanotube field effect transistors (2012)
  • Author(s): M. Tamaoki, S. Kishimoto, Y. Ohno and T. Mizutani
  • Journal Title: Appl. Phys. Lett. Volume: 101, 033101 Issue: 3 Pages: 1-3
  • DOI: 10.1063/1.4737169
  • Peer Reviewed
• [Presentation] n型カーボンナノチューブ薄膜トランジスタのしきい値ばらつきの評価 (2014)
  • Author(s): 安西智洋、岸本茂、大野雄高
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-19
• [Presentation] Threshold voltage distribution of chemically doped n-type carbon nanotube thin-film transistors (2014)
  • Author(s): 安西智洋、岸本茂、大野雄高
  • Organizer: 第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム
  • Place of Presentation: 名古屋大学
  • Year and Date: 2014-09-05
• [Presentation] 化学ドープn型カーボンナノチューブ薄膜トランジスタの伝導特性-大気の影響と安定性の向上- (2014)
  • Author(s): 安西智洋, 岸本茂, 大野雄高
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
• [Presentation] プラスチック基板上におけるn型カーボンナノチューブ薄膜トランジスタの作製と評価 (2014)
  • Author(s): 安西智洋, 岸本茂, 大野雄高
  • Organizer: 電子情報通信学会
  • Place of Presentation: 北海道大学
• [Presentation] グラフェン電極CNT-FETにおけるグラフェン層厚さのI-V特性への影響
  • Author(s): 玉置聖人、岸本茂、水谷孝
  • Organizer: 第43階フラーレン・ナノチューブ・グラフェン総合シンポジウム
  • Place of Presentation: 東北大学
• [Presentation] Conduction-Type Control of Carbon Nanotube Field-Effect Transistors by Pd and Ti Overlayer Doping
  • Author(s): 石井聡、玉置聖人、岸本茂、水谷孝
  • Organizer: 第43階フラーレン・ナノチューブ・グラフェン総合シンポジウム
  • Place of Presentation: 東北大学
• [Presentation] Pd, Ti被膜ドーピングによるCNTFETの伝導型制御
  • Author(s): 石井聡、玉置聖人、岸本茂、水谷孝
  • Organizer: 第73回秋季応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学