| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Outline of Final Research Achievements |
We have developed an in-situ characterization technique for the carrier transport and defects in semiconductor films during plasma processing. By applying this technique to hydrogenated amorphous silicon under growth by plasma enhanced CVD, we find that the defect-rich surface layer of <20nm is formed and the bulk layer is grown underneath it. During postgrowth annealing, the defect-rich surface layer is reorganized and the carrier transport is improved by one order of magnitude.
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