Basic technology development of organic transistors for high-frequency-operating organic CMOS circuits
| Project/Area Number |
24550211
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Functional materials/Devices
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| Research Institution | Kobe University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2014: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2013: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2012: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | 有機トランジスタ / 薄膜トランジスタ / 移動度 / 閾値電圧 / 仕事関数 / 表面処理 / 表面修飾 / 有機半導体 / 単分子膜 / 電極表面修飾 / 界面制御 |
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| Outline of Final Research Achievements |
The basic technology development for realization of high-frequency operating organic-transistor circuits leaded to the following achievement. Surface treatment for contact electrodes and optimization of fabrication process realized a high mobility of 3.3 cm2/Vs in organic transistors with bottom contact configuration that is easily applied to short channel transistors. Also, threshold voltage control in the range of a few V was demonstrated by oxygen plasma treatment. Furthermore, the work function and the thermal stability of surface-modified electrodes for low contact resistance were investigated. As a result, work functions in the range of 4.3 to 5.5 eV were obtained.
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Report
(4 results)
Research Products
(35 results)
