Study on strain fields of GaN crystals which have microstructures in mesoscopic scale.

• Project/Area Number: 24560009
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Japan Women's University
• Principal Investigator: AKIMOTO Koichi 日本女子大学, 理学部, 教授 (40262852)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
• Keywords: Ｘ線回折 / 窒化ガリウム / メゾスコピック / Ｘ線トポグラフィー / 結晶欠陥 / 電子回折 / 表面構造 / 結晶工学 / シンクロトロン放射光 / 格子ひずみ / 化合物半導体 / ＧａＮ

Outline of Final Research Achievements

By X-ray topography using CCD camera, two images of lattice inclination and lattice expansion or contraction of GaN crystals were obtained separately in micrometer order scale. Using these images, crystal defects in GaN were studied. By using UHV chamber which has reflection high energy electron diffraction apparatus, surface structure of GaN was observed during thermal annealing processes.

Research Products

• [Journal Article] Determination of non-uniform graphene thickness on SiC(0001) by X-ray diffraction (2013)
  • Author(s): A. Ruammaitree, H. Nakahara, K. Akimoto, K. Soda, Y. Saito
  • Journal Title: Applied Surface Science Volume: 282 Pages: 297-301
  • DOI: 10.1016/j.apsusc.2013.05.122
  • Peer Reviewed
• [Presentation] X線トポグラフ法によるGaN結晶の欠陥評価 (2015)
  • Author(s): 井上絵美子、 野口彩純、大山美咲、渡辺玲那、秋本晃一
  • Organizer: 日本物理学会第70回年次大会
  • Place of Presentation: 早稲田大学（東京都新宿区）
  • Year and Date: 2015-03-21 – 2015-03-24
• [Presentation] Quantitative Strain Analysis of Surfaces and Interfaces Using Extremely Asymmetric X-Ray Diffraction (2014)
  • Author(s): Koichi Akimoto
  • Organizer: Joint Symposium 2014, Ewha Womans University, Japan Women’s University and Ochanomizu University for the promotion and research for women in science
  • Place of Presentation: Ewha Womans University, Seoul （韓国）
  • Year and Date: 2014-12-02 – 2014-12-04
  • Invited
• [Presentation] GaN Lattice Distortion and Surface Structure (2014)
  • Author(s): Azumi Noguchi, Emiko Inoue, Misaki Oyama, Rena Watanabe, Koichi Akimoto
  • Organizer: Joint Symposium 2014, Ewha Womans University, Japan Women’s University and Ochanomizu University for the promotion and research for women in science
  • Place of Presentation: Ewha Womans University, Seoul （韓国）
  • Year and Date: 2014-12-02 – 2014-12-04
• [Presentation] Quantitative Strain Analysis of Surfaces and Interfaces Using Extremely Asymmetric X-Ray Diffraction (2014)
  • Author(s): K. Akimoto
  • Organizer: 第3回表面界面物理に関する国際会議(PSI2014)
  • Place of Presentation: Hotel Blue Lily Resort（インド・オリッサ州・プリー）
  • Invited
• [Presentation] Quantitative Strain Analysis of Surfaces and Interfaces Using Extremely Asymmetric X-Ray Diffraction (2013)
  • Author(s): K. Akimoto, T. Emoto
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学、京都
  • Invited