| Project/Area Number |
24560010
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Mie University |
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Principal Investigator |
MIYAKE Hideto 三重大学, 工学(系)研究科(研究院), 准教授 (70209881)
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| Co-Investigator(Kenkyū-buntansha) |
HIRAMATU Kazumasa 三重大学, 大学院工学研究科, 教授 (50165205)
NAOI Hiroyuki 和歌山工業高等専門学校, 電気情報工学科, 准教授 (10373101)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 窒化物半導体 / GaN / AlN / 電子線励起 / 紫外光源 / 組成変調 / MOVPE / 窒化アルミニウム / AlGaN / 多重量子井戸 / 深紫外光源 |
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| Outline of Final Research Achievements |
We have investigated the insertion of different lattice-relaxation layers between the AlGaN MQW layer and the AlN layer on sapphire. Lattice-relaxation layers using an AlN interlayer with a growth temperature of 1450 oC on two high-Al-mole-fraction AlGaN layers (structure (b)) presents the strongest emission intensity and also the highest crystal quality of AlGaN MQWs.
Using high temperature AlN films as the lattice-relaxation layer improved crystal quality and emission intensity in AlGaN MQWs. The detailed mechanism will be discussed in a future study.
A prototype ultraviolet-light-source tube was fabricated with an AlGaN film used as a target for electron-beam (EB) excitation. The deep-UV light output power and conversion efficiency of the AlGaN MQW target for EB pumping voltage of 10kV were investigated. The deep-UV light output power was 16 mW at a wavelength of 256 nm, when the EB input power of 2W, and that the conversion efficiency was 1% at the EB input power of 1W.
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