| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
Fermi level pinning at the surface, insulator/semiconductor interface, and metal/semiconductor interface has been investigated for InAlN lattice matched to GaN. Pinning at the InAlN surface was found to be removed by an appropriate insulator deposition. The interface state density at the insulator/InAlN interface was found to be dependent on the interface formation process and post deposition annealing. An original method to form an Al2O3/InAlN interface with a low interface state density was developed. For the metal/InAlN interface, strong dependence of the Schottky barrier height on the metal work function was seen.
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