Physics in wetting layer on bond engineering

• Project/Area Number: 24560025
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Mie University
• Principal Investigator: ITO Tomonori 三重大学, 工学(系)研究科(研究院), 教授 (80314136)
• Co-Investigator(Kenkyū-buntansha): AKIYAMA Toru 三重大学, 大学院工学研究科, 准教授 (40362363)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000); Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2012: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 量子論的アプローチ / 半導体ぬれ層 / 吸着・脱離 / 成長過程 / 半導体表面構造 / 状態図 / 格子不整合系 / ぬれ層表面 / 量子ドット / 成長機構 / 計算材料科学

Outline of Final Research Achievements

We have systematically investigated structural change in InAs(001)-(2×3) wetting layer surfaces as functions of temperature and beam-equivalent pressure using ab initio-based approach. We found that the (2×3) surface is unstable and does not incorporate In atoms to prevent InAs growth at the conventional growth conditions. This is due to the large strain induced by In adsorption on the wetting layer surface. In order to reduce the large strain, a (4x3) surface appears with missing surface dimer where In atom favorably occupies to form In-As dimer and proceed InAs growth on the wetting layer.

Research Products

• [Journal Article] Systematic theoretical investigations on surface reconstructions and adatom kinetics on AlN semipolar surfaces (2015)
  • Author(s): Yoshitaka Takemoto, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 13
  • NAID: 130005071334
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Effects of Zn doping on the surface structure and initial growth processes of InP thin film layers on InP(111)B substrate (2015)
  • Author(s): Masataka Kato, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 13
  • NAID: 130005063562
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Ab initio-based approach to structural change in InAs(001)-(2×3) wetting layer surfaces during MBE growth (2015)
  • Author(s): Tomonori Ito, Toru Akiyama, and Kohji Nakamura
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 13
  • NAID: 130005066302
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Electronic bands and excited states of III-V semiconductor polytypes with screened-exchange density functional calculations (2014)
  • Author(s): Toru Akiyama, Kohji Nakamura, Tomonori Ito, and A. J. Freeman
  • Journal Title: Applied Physics Letters Volume: 104 Issue: 13
  • DOI: 10.1063/1.4870095
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Theoretical Investigations for the Formation of InN/GaN(0001) Heterostructures (2014)
  • Author(s): Ayako Ito, Tatsuhiko Sugitani, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 12 Issue: 0 Pages: 136-140
  • DOI: 10.1380/ejssnt.2014.136
  • NAID: 130004677839
  • ISSN: 1348-0391
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Systematic Theoretical Investigations for Miscibility of GaN<i>_x</i>As_1-<i>_x-y</i>Bi<i>_y</i>Thin Films (2014)
  • Author(s): Takahirao Makihara, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 12 Issue: 0 Pages: 171-174
  • DOI: 10.1380/ejssnt.2014.171
  • NAID: 130004933811
  • ISSN: 1348-0391
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability (2014)
  • Author(s): Yoshihiro Kangawa, Tomonori Ito, Akinori Koukitu, and Koichi Kakimoto
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 10 Pages: 1-11
  • DOI: 10.7567/jjap.53.100202
  • NAID: 210000144512
  • Peer Reviewed / Open Access
• [Journal Article] Empirical interatomic potential approach to the stability of graphitic structure in ANB8-N compounds (2014)
  • Author(s): Tomonori Ito, Toru Akiyama, and Kohji Nakamura
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 11 Pages: 110304-110304
  • DOI: 10.7567/jjap.53.110304
  • NAID: 210000144547
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Ab initio-based approach to N-pair formation on GaAs(001)-(2×4) surfaces (2014)
  • Author(s): Tomonori Ito, Tatsuhiko Sugitani, Toru Akiyama, and Kohji Nakamura
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 12 Pages: 6-10
  • NAID: 130004438863
  • Peer Reviewed
• [Journal Article] Doping effects on polytypism in semiconductor nanowires: A first-principles study (2014)
  • Author(s): Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, and Tomonori Ito
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 12 Pages: 18-22
  • NAID: 130004438865
  • Peer Reviewed
• [Journal Article] Systematic theoretical investigations for atomic arrangements of GaNxAs1-x nanowires surrounded by semiconductor template (2014)
  • Author(s): Masataka Kato, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 12 Pages: 45-48
  • NAID: 130004933793
  • Peer Reviewed
• [Journal Article] Theoretical study for crystal structure deformation in ANB8-N compound (2014)
  • Author(s): Yoshitaka Takemoto, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 12 Pages: 79-82
  • NAID: 130004933799
  • Peer Reviewed
• [Journal Article] 第一原理による多形決定のメカニズム解明 (2013)
  • Author(s): 伊藤智徳，秋山亨，中村浩次
  • Journal Title: 日本結晶成長学会誌 Volume: 40 Pages: 11-19
  • Peer Reviewed
• [Journal Article] Theoretical investigation on temperature and pressure dependence of structural stability of InP thin layers grown on InP(111)A surface (2013)
  • Author(s): 山下智樹、秋山亨、中村浩次、伊藤智徳
  • Journal Title: Surface Science Volume: 610 Pages: 16-21
  • DOI: 10.1016/j.susc.2012.12.019
  • Peer Reviewed
• [Journal Article] Diffusion of carbon oxides in SiO2 during SiC oxidation: A first-principles study (2013)
  • Author(s): Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, and Masashi Uematsu
  • Journal Title: Journal of Applied Physics Volume: 113
  • Peer Reviewed
• [Journal Article] Systematic theoretical investigations for the polytypism in SiC (2013)
  • Author(s): Tomonori Ito, Toru Akiyama, and Kohji Nakamura
  • Journal Title: Physica Status Solidi (c) Volume: 10 Issue: 5 Pages: 857-860
  • DOI: 10.1002/pssc.201200570
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001) (2013)
  • Author(s): Tomonori Ito, Kentaro Hirai, Toru Akiyama, and Kohji Nakamura
  • Journal Title: Journal of Crystal Growth Volume: 378 Pages: 13-16
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to initial incorporation of Bi on GaAs(001)-c(4×4) surfaces (2013)
  • Author(s): Isao Murase, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: Journal of Crystal Growth Volume: 378 Pages: 21-24
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to incorporation of nitrogen on GaAs(001) surfaces (2013)
  • Author(s): Tatsuhiko Sugitani, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: Journal of Crystal Growth Volume: 378 Pages: 29-33
  • Peer Reviewed
• [Journal Article] Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach (2013)
  • Author(s): Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama
  • Journal Title: Materials 2013 Volume: 6 Issue: 8 Pages: 3309-3361
  • DOI: 10.3390/ma6083309
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to elemental growth process of In adatom on the InAs wetting layer grown on GaAs (2013)
  • Author(s): Tomonori Ito, Kosuke Ogasawara, Tatsuhiko Sugitani, Toru Akiyama, and Kohji Nakamura
  • Journal Title: Journal of Crystal Growth Volume: 362 Pages: 2-5
  • DOI: 10.1016/j.jcrysgro.2012.07.030
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to elemental elemental nitridation process of α-Al2O3 (2013)
  • Author(s): Yasutaka Saito, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: Journal of Crystal Growth Volume: 362 Pages: 29-32
  • DOI: 10.1016/j.jcrysgro.2012.01.048
  • Peer Reviewed
• [Journal Article] Nitridation of Al2O3 surfaces: chemical and structural change triggered by oxygen desorption (2013)
  • Author(s): Toru Akiyama, Yasutaka Saito, Kohji Nakamura, and Tomonori Ito
  • Journal Title: Physical Review Letters Volume: 110 Issue: 2
  • DOI: 10.1103/physrevlett.110.026101
  • Peer Reviewed
• [Journal Article] Growth of side facets in InP nanowires : First-principles-based approach (2013)
  • Author(s): 山下智樹、秋山亨、中村浩次、伊藤智徳
  • Journal Title: Surface Science Volume: 609 Pages: 207-214
  • DOI: 10.1016/j.susc.2012.12.009
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to initial incorporation of Bi on GaAs(001)-c(4×4) α surfaces (2013)
  • Author(s): Isao Murase, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: Journal of Crystal Growth Volume: 未定 Pages: 21-24
  • DOI: 10.1016/j.jcrysgro.2012.12.047
  • Peer Reviewed
• [Journal Article] Reconstructions on AlN nonpolar surfaces in the presence of hydrogen (2012)
  • Author(s): Toru Akiyama, Daisuke Obara, Kohji Nakamura, and Tomonori Ito
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 4R Pages: 048002-048002
  • DOI: 10.1143/jjap.51.048002
  • NAID: 210000140468
  • Peer Reviewed
• [Journal Article] Ab initio-based study for adatom kinetics on AlN(0001) surfaces during metal-organic vapor-phase epitaxy growth (2012)
  • Author(s): Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Journal Title: Applied Physics Letters Volume: 100 Issue: 25
  • DOI: 10.1063/1.4729479
  • Peer Reviewed
• [Journal Article] As-rich (2×2) surface reconstruction on GaAs(111)A (2012)
  • Author(s): Akihiro Ohtake, Toru Akiyama, and Tomonori Ito
  • Journal Title: Surface Science Volume: 606 Issue: 23-24 Pages: 1864-1870
  • DOI: 10.1016/j.susc.2012.07.029
  • Peer Reviewed
• [Presentation] Ab initio-based approach to novel behavior of hetero-epitaxially grown semiconductor surfaces (2015)
  • Author(s): Tomonori Ito, Toru Akiyama, and Kohji Nakamura
  • Organizer: SemiconNano 2015
  • Place of Presentation: Taiwan (Hsinchu)
  • Year and Date: 2015-09-06 – 2015-09-11
  • Invited
• [Presentation] 化合物半導体MBE成長への量子論的アプローチ (2014)
  • Author(s): 伊藤智徳
  • Organizer: 計算機センター特別研究会プロジェクト「結晶成長の数理」
  • Place of Presentation: 学習院大学（東京）
  • Year and Date: 2014-12-25 – 2014-12-26
  • Invited
• [Presentation] ボンドオーダーポテンシャルから見た半導体の構造安定性 (2014)
  • Author(s): 伊藤智徳
  • Organizer: 東北大学電気通信研究所共同プロジェクト研究会「非平衡スピン・ゆらぎの精緻な制御と観測による新規ナノデバイスの開拓研究」
  • Place of Presentation: ベルサンピアみやぎ泉（仙台）
  • Year and Date: 2014-11-13 – 2014-11-14
• [Presentation] 化合物半導体エピタキシーにおける量子計算科学の展開 (2014)
  • Author(s): 寒川義裕，秋山亨，伊藤智徳，白石賢二，中山隆史
  • Organizer: 第44回結晶成長国内会議
  • Place of Presentation: 学習院大学（東京）
  • Year and Date: 2014-11-06 – 2014-11-08
  • Invited
• [Presentation] Ab initio-based approach to structural change in InAs(001)-(2×3) wetting layer surfaces during MBE growth (2014)
  • Author(s): Tomonori Ito, Toru Akiyama, and Kohji Nakamura
  • Organizer: The 7h International Symposium on Surface Science
  • Place of Presentation: くにびきメッセ（松江）
  • Year and Date: 2014-11-02 – 2014-11-06
• [Presentation] Molecular dynamics study of thermal conductivity in semiconductor nanowires: Effect of rotation twins (2014)
  • Author(s): Toru Akiyama, Takato Komoda, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 7h International Symposium on Surface Science
  • Place of Presentation: くにびきメッセ（松江）
  • Year and Date: 2014-11-02 – 2014-11-06
• [Presentation] Systematic theoretical investigations on surface reconstructions and adatom kinetics on AlN semipolar surfaces (2014)
  • Author(s): Yoshitaka Takemoto, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 7h International Symposium on Surface Science
  • Place of Presentation: くにびきメッセ（松江）
  • Year and Date: 2014-11-02 – 2014-11-06
• [Presentation] Effects of Zn doping on the surface structure and initial growth processes of InP thin film layers on InP(111)B substrate (2014)
  • Author(s): Masataka Kato, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 7h International Symposium on Surface Science
  • Place of Presentation: くにびきメッセ（松江）
  • Year and Date: 2014-11-02 – 2014-11-06
• [Presentation] Theoretical investigations for initial oxidation processes on SiC surfaces (2014)
  • Author(s): Ayako Ito, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 7h International Symposium on Surface Science
  • Place of Presentation: くにびきメッセ（松江）
  • Year and Date: 2014-11-02 – 2014-11-06
• [Presentation] InAsナノワイヤの電子構造および電気伝導率に関する理論的検討 (2014)
  • Author(s): 秋山亨，中村浩次，伊藤智徳
  • Organizer: 2014年秋季第75回応用物理学会学術講演会
  • Place of Presentation: 北海道大学（札幌）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] InAs(0001)-(2×3)ぬれ層表面に対する量子論的アプローチ (2014)
  • Author(s): 伊藤智徳，秋山亨，中村浩次
  • Organizer: 2014年秋季第75回応用物理学会学術講演会
  • Place of Presentation: 北海道大学（札幌）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] InP(111)B表面における表面再構成および成長初期過程のZnドーピング効果に関する理論的検討 (2014)
  • Author(s): 加藤真崇，秋山亨，中村浩次，伊藤智徳
  • Organizer: 2014年秋季第75回応用物理学会学術講演会
  • Place of Presentation: 北海道大学（札幌）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] SiC表面における酸化初期過程に関する理論的研究 (2014)
  • Author(s): 伊藤綾子，秋山亨，中村浩次，伊藤智徳，白石賢二，影島博之，植松真司
  • Organizer: 2014年秋季第75回応用物理学会学術講演会
  • Place of Presentation: 北海道大学（札幌）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] AlN半極性表面における表面再構成およびAl原子の吸着脱離に関する理論的検討 (2014)
  • Author(s): 竹本圭孝，秋山亨，中村浩次，伊藤智徳
  • Organizer: 2014年秋季第75回応用物理学会学術講演会
  • Place of Presentation: 北海道大学（札幌）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] An empirical potential approach to the stability of graphitic structure in ANB8-N compounds (2014)
  • Author(s): Tomonori Ito, Toru Akiyama, and Kohji Nakamura
  • Organizer: 第33回電子材料シンポジウム
  • Place of Presentation: ラフォーレ修善寺（修善寺）
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] An empirical potential approach to structural stability for hexagonal boron nitride (2014)
  • Author(s): Tomonori Ito, Toru Akiyama, and Kohji Nakamura
  • Organizer: 56th Electronic Materials Conference
  • Place of Presentation: USA (Santa Barbara)
  • Year and Date: 2014-06-25 – 2014-06-27
• [Presentation] Electronic bands of III-V semiconductor polytypes with screened-exchange density functional calculations (2014)
  • Author(s): Toru Akiyama, Kohji Nakamura, Tomonori Ito, and A. J. Freeman
  • Organizer: 56th Electronic Materials Conference
  • Place of Presentation: USA (Santa Barbara)
  • Year and Date: 2014-06-25 – 2014-06-27
• [Presentation] Ab-initio based approach to surface reconstruction and adsorption-desorption behavior of Al on AlN semipolar surfaces (2014)
  • Author(s): Yoshitaka Takemoto, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Organizer: 56th Electronic Materials Conference
  • Place of Presentation: USA (Santa Barbara)
  • Year and Date: 2014-06-25 – 2014-06-27
• [Presentation] Initial reaction processes on SiC surfaces during thermal oxidation: A first-principles study (2014)
  • Author(s): Ayako Ito, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Kenji Shiraishi, and Hiroyuki Kageshima
  • Organizer: 56th Electronic Materials Conference
  • Place of Presentation: USA (Santa Barbara)
  • Year and Date: 2014-06-25 – 2014-06-27
• [Presentation] A systematization of the structural stability in ANB8-N compounds based on the bond-order potential (2013)
  • Author(s): Tomonori Ito, Toru Akiyama, and Kohji Nakamura
  • Organizer: The 17th International Conference on Crystal Growth and Epitaxy
  • Place of Presentation: Warsaw
• [Presentation] Ab initio-based study for AlN thin film formation processes during nitridation of Al2O3 surfaces (2013)
  • Author(s): Toru Akiyama, Yasutaka Siato, Kohji Nakamura, and Tomonori Ito, M. Weinert, and A. J. Freeman
  • Organizer: JASAP-MRS Joint Symposia
  • Place of Presentation: 京田辺
• [Presentation] GaAs(0001)-(2×4)表面におけるNペア形成に関する理論検討 (2013)
  • Author(s): 伊藤智徳，杉谷龍彦，秋山亨，中村浩次
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 京田辺
• [Presentation] A8-NBN化合物の構造変化に関する理論的検討 (2013)
  • Author(s): 竹本圭孝，伊藤智徳，秋山亨，中村浩次
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 京田辺
• [Presentation] InAs/GaAs(001)ぬれ層表面での表面構造変化に関する量子論的アプローチ (2013)
  • Author(s): 平井健太郎，秋山亨，中村浩次，伊藤智徳
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 京田辺
• [Presentation] InN/GaNヘテロ構造形成過程でのIII族元素の原子配置に関する理論的研究 (2013)
  • Author(s): 伊藤綾子，秋山亨，中村浩次，伊藤智徳
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 京田辺
• [Presentation] GaNxAs1-x-y Biy/GaAs(001)薄膜の混和性に関する理論的検討 (2013)
  • Author(s): 牧原敬宏，秋山亨，中村浩次，伊藤智徳
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 京田辺
• [Presentation] 側面に基板拘束のあるGaNxAs1-x-yナノワイヤの混和性に関する理論的研究 (2013)
  • Author(s): 加藤真崇，秋山亨，中村浩次，伊藤智徳
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 京田辺
• [Presentation] Ab initio-based approach to N-pair formation on GaAs(001)-(2×4) surfaces (2013)
  • Author(s): Tomonori Ito, Tatsuhiko Sugitani, Toru Akiyama, and Kohji Nakamura
  • Organizer: The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: つくば
• [Presentation] Theoretical investigations for the formation of InN/GaN(0001) heterostructures (2013)
  • Author(s): Ayako Ito, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: つくば
• [Presentation] Systematic theoretical investigations for miscibility of GaNxAs1-x-yBiy thin films (2013)
  • Author(s): Takahirro Makihara, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: つくば
• [Presentation] Theoretical study for crystal structure deformation in ANB8-N compounds (2013)
  • Author(s): Yoshitaka Takemoto, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: つくば
• [Presentation] Systematic theoretical investigations for atomic arrangements of GaNxAs1-x nanowires surrounded by semiconductor templates (2013)
  • Author(s): Masataka Kato, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: つくば
• [Presentation] Doping effect on polytypism in semiconductor nanowires: A first-principles study (2013)
  • Author(s): Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: つくば
• [Presentation] Computational approach to thermal conductivity of InAs/InP core/shell nanowires (2013)
  • Author(s): Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: つくば
• [Presentation] In incorporation in various crystal planes by first principle calculation (2012)
  • Author(s): Tomonori Ito
  • Organizer: The 16th International Conference of Metal-Organic Vapor Phase Epitaxy
  • Place of Presentation: Busan
  • Invited
• [Presentation] AlN(0001)表面上でのAlおよびN原子の挙動に関する量子論的アプローチ (2012)
  • Author(s): 秋山亨，中村浩次，伊藤智徳，宮川鈴衣奈，三宅秀人，平松和政
  • Organizer: 2012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 松山
• [Presentation] 半導体ナノワイヤの結晶構造におけるドーピング効果に関する理論的検討 (2012)
  • Author(s): 秋山亨，山下智樹，中村浩次，伊藤智徳
  • Organizer: 2012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 松山
• [Presentation] GaAs(001)表面上のN取り込みに対する量子論的アプローチ (2012)
  • Author(s): 杉谷龍彦，秋山亨，中村浩次，伊藤智徳
  • Organizer: 2012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 松山
• [Presentation] GaAs(001)表面におけるBi取り込みに対する量子論的アプローチ (2012)
  • Author(s): 村瀬功，秋山亨，中村浩次，伊藤智徳
  • Organizer: 2012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 松山
• [Presentation] InAs/GaAs(001)-(n×3)ぬれ層表面構造に対する量子論的アプローチ (2012)
  • Author(s): 平井健太郎，秋山亨，中村浩次，伊藤智徳
  • Organizer: 2012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 松山
• [Presentation] Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001) (2012)
  • Author(s): Tomonori Ito, Toru Akiyama, and Kohji Nakamura
  • Organizer: The 17th International Conference on Molecular Bean Epitaxy
  • Place of Presentation: 奈良
• [Presentation] Ab initio-based approach to initial incorporation of Bi on GaAs(001)-c(4×4)α&#61472;surface (2012)
  • Author(s): Isao Murase, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
  • Organizer: The 17th International Conference on Molecular Bean Epitaxy
  • Place of Presentation: 奈良
• [Presentation] Ab initio-based investigations for incorporation of nitrogen on GaAs(001) surfaces (2012)
  • Author(s): Tatsuhiko Sugitani, Tomonori Ito, Toru Akiyama, and Kohji Nakamura
  • Organizer: The 17th International Conference on Molecular Bean Epitaxy
  • Place of Presentation: 奈良
• [Presentation] Computational approach for the growth process of semiconductor nanowires (2012)
  • Author(s): Toru Akiyama
  • Organizer: Collaborative Conference on Crystal Growth 2012
  • Place of Presentation: Orland
  • Invited
• [Book] Handbook of Crystal Growth, Volume 1 Fundamentals, Chapter 11 (2014)
  • Author(s): Tomonori Ito and Yoshihiro Kangawa
  • Total Pages: 44
  • Publisher: Elsevier
• [Book] ポストシリコン半導体 ―ナノ成膜ダイナミクスと基板・界面効果― (2013)
  • Author(s): 伊藤智徳，佐藤勝昭，押山淳，室田淳一，櫻庭政夫，奥村元，北畠真，石田夕起，矢野裕司，竹内哲也，尾鍋健太郎，鳥海明，酒井朗，中塚理，堀越佳治，杉山弘樹，秦雅彦，高木信一，大友明，川原田洋 他36名
  • Total Pages: 510
  • Publisher: エヌ・ティー・エス
• [Book] ナノワイヤ最新技術の基礎と応用展開（第2編第6章 形成機構計算） (2013)
  • Author(s): 秋山亨
  • Total Pages: 241
  • Publisher: シーエムシー出版
• [Book] 次世代結晶性半導体におけるナノ成膜ダイナミックスと界面量子効果（4編3章1節 ボンドエンジニアリングによる半導体表面状態図の予測と考察） (2013)
  • Author(s): 伊藤智徳
  • Publisher: エヌ・ティー・エス