Development of high-resolution depth profiling of dopants in silicon
| Project/Area Number |
24560027
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Kyoto University |
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Principal Investigator |
NAKAJIMA Kaoru 京都大学, 工学(系)研究科(研究院), 准教授 (80293885)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 半導体物性 / 表面・界面物性 / 軽元素分析 / ドーパント / イオン散乱分光法 / 弾性反跳粒子検出法 / アトムプローブ / イオン散乱分光 / 二次イオン質量分析 |
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| Outline of Final Research Achievements |
For high-resolution Rutherford backscattering spectroscopy (high-resolution RBS) and high-resolution elastic recoil detection (high-resolution ERD), the detector system has been reconstructed to improve the sensitivity and the depth resolution for relatively light atoms in silicon, such as dopant atoms (boron, phosphorus, etc.). The improved sensitivity and depth resolution was demonstrated by carrying out high-resolution ERD measurements of various samples, which were prepared by evaporating a small amount of lithium or lithium fluoride on a silicon wafer or a graphite substrate. Consequently, the sensitivity of less than 0.01 ML was achieved for lithium atoms at the surface of the graphite substrate under typical measurement conditions. The depth resolution was estimated to be 0.5 nm at the surface and was better than 3 nm in the surface region within 5 nm from the surface.
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Report
(4 results)
Research Products
(8 results)
