| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Outline of Final Research Achievements |
Narrow-gap III-V compound semiconductors such as InSb and InAs are indispensable materials for highly sensitive magnetic sensors. We have systematically studied transport properties of InSb and InAsSb quantum wells: the well-width dependence of sheet resistivity, carrier density and mobility. The carrier density and mobility of InAsSb QWs are higher than these of InSb QWs. The InAsSb QWs shows high mobility regardless of the well width. The calculated band-alignment of these QWs revealed that the bottom of the conduction band of InSb QWs is above the Fermi level, while that of InAs0.1Sb0.9 QWs is under the Fermi level, which leads the differece of the carrier density. We also discussed the doping effect into InSb QWs. The doping improves temperature dependence of the mobility and resistivity.
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