Transport and spin properties in narrow gap compound semiconductors
| Project/Area Number |
24560034
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Fukuoka University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SHIBASAKI Ichiro 公益財団法人野口研究所, 顧問 (10557250)
ISHIDA Shuichi 山口投稿理科大学, 工学部, 嘱託教授 (70127182)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 量子井戸 / キャリア密度 / 移動度 / バンド構造 / バンドダイアグラム / InSb / InAsSb / 分子線エピタキシー / ホールセンサ / スピン軌道相互作用 / スピンポンピング / バンドアライメント / ホールセンサー |
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| Outline of Final Research Achievements |
Narrow-gap III-V compound semiconductors such as InSb and InAs are indispensable materials for highly sensitive magnetic sensors. We have systematically studied transport properties of InSb and InAsSb quantum wells: the well-width dependence of sheet resistivity, carrier density and mobility. The carrier density and mobility of InAsSb QWs are higher than these of InSb QWs. The InAsSb QWs shows high mobility regardless of the well width. The calculated band-alignment of these QWs revealed that the bottom of the conduction band of InSb QWs is above the Fermi level, while that of InAs0.1Sb0.9 QWs is under the Fermi level, which leads the differece of the carrier density. We also discussed the doping effect into InSb QWs. The doping improves temperature dependence of the mobility and resistivity.
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Report
(4 results)
Research Products
(42 results)
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[Presentation] 静磁表面波の減衰長の磁性層厚依存性2015
Author(s)
太田 雅己、葛西 伸哉、 三谷 誠司、眞砂 卓史
Organizer
第62回応用物理学会春季学術講演会
Place of Presentation
東海大学（神奈川）
Year and Date
2015-03-11 – 2015-03-14
Related Report
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[Presentation] 静磁表面波の群速度の磁性層厚依存性2014
Author(s)
太田 雅己、葛西 伸哉、 三谷 誠司、眞砂 卓史
Organizer
秋季第75回応用物理学関係連合講演会
Place of Presentation
北海道大学（北海道)
Year and Date
2014-09-18 – 2014-09-20
Related Report
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