| Project/Area Number |
24560035
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
AIZAWA Takashi 独立行政法人物質・材料研究機構, 表界面構造・物性ユニット, 主席研究員 (00354431)
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| Co-Investigator(Kenkyū-buntansha) |
SUEHARA Shigeru 物質・材料研究機構, 主幹研究員 (00354374)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 遷移金属炭化物 / 遷移金属ホウ化物 / 分子線エピタキシ / シリセン / エピタキシ |
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| Outline of Final Research Achievements |
ZrC molecular beam epitaxy was examined as an example of transition-metal carbides and diborides. On a clean ZrC(111) surface, a layer-by-layer growth took place at very low temperature of 400℃. On oxide substrates and Si substrates, it grew epitaxially but as islands. At high temperature, ZrC reacted with the oxide substrate. In the case of Si substrate, Si atoms were diffused to the growing surface, which prevent the layer-by-layer growth of ZrC.
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