| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Outline of Final Research Achievements |
To clarify the mechanism of degradation in domain switching performance in ferroelectric materials, we have investigated the effect of defects on the domain wall motion and the interplay between external electric field and mechanical loading. We have developed a new scheme of semi-automatic building of interatomic potentials, which consists of reference data generation, parameter optimization, self-monitoring of potential validity and regeneration of reference data. With molecular dynamics simulations we have presented strong effects of kinks, vacancies and electric fields on the critical stress for domain wall motion. With atomistic-level instability mode analyses we have also shown the mechanism of the activation of latent instability modes created around defects.
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