| Project/Area Number |
24560151
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Akita Industrial Technology Center |
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Principal Investigator |
AKAGAMI Yoichi 秋田県産業技術センター, その他部局等, その他 (00373217)
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| Co-Investigator(Kenkyū-buntansha) |
KUSUMI Takayuki 秋田県産業技術センター, 素形材プロセス開発部, 主任研究員 (40370233)
中村 竜太 秋田県産業技術センター, その他部局等, 研究員 (00634213)
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| Co-Investigator(Renkei-kenkyūsha) |
NAKMURA Ryuta 秋田県産業技術センター, 素形材プロセス開発部, 研究員 (00634213)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 研磨 / スラリー / サファイア / 電界砥粒制御研磨技術 / ＣＭＰ / 電界砥粒制御技術 / 遊離砥粒研磨 / 砥粒 / 電界 |
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| Outline of Final Research Achievements |
In this study, we obtained new polishing technologies for a high brittle material single crystal sapphire substrate used to LED. We provided high electric field under the polishing environment ,during high-speed rotation polishing platen,
we obtained the results to the excellent polishing quality and polishing rate that it is improved 31.7% using the sample of 6 inch size wafer for mass production, to be better than the conventional polishing method .
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