| Project/Area Number |
24560244
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thermal engineering
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| Research Institution | Tomakomai National College of Technology |
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Principal Investigator |
KIKUTA Kazushige 苫小牧工業高等専門学校, その他部局等, 教授 (90214741)
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| Co-Investigator(Renkei-kenkyūsha) |
CHIKAHISA Takemi 北海道大学, 大学院工学研究院, 教授 (00155300)
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| Research Collaborator |
OOZEKI Atsushi
HASEGAWA Takeshi
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 結晶成長 / 化合物半導体 / 伝熱 / 対流 / 可視化 / 旋回流 |
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| Outline of Final Research Achievements |
This study is aimed at stabilizing the growth of the GaAs single crystal growth. To clarify the complex flow phenomenon of the melt was subjected to modeling by flow observation and numerical simulation of the melt in the crucible that simulates the growth apparatus using a visualization experiment equipment. It was able to clarify the behavior of the complex flow field when the changes of the amount of the melt by visualization experiments. On the other hand, the modeling by numerical simulation, in addition to the modeling of complex flow fields with natural convection was carried modeling of the forced convection due to the rotation. As a result, the model was able to satisfactorily reproduce the flow field by the visualization experiment.In this study, it was possible to clarify the complex flow field and mechanisms of crystal growth associated with it.
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