| Project/Area Number |
24560362
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
HANADA Takashi 東北大学, 金属材料研究所, 助教 (80211481)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | 窒化物半導体 / 発光ダイオード / 有機金属気相成長 / InGaN / MOVPE |
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| Outline of Final Research Achievements |
In this study, the realization of III-nitrides-based light-emitting diodes (LEDs) with the whole visible emission wavelength was demonstrated. N-polar crystal plane was adopted for the crystal growth for promoting indium incorporation into an InGaN layer, in order to achieve the long-wavelength emission. In the growth of N-polar InGaN/GaN multiple quantum wells (MQWs), the metastable zincblende (ZB) structure was unintentionally incorporated. Several growth conditions such as growth temperature and V/III source ratio were effective to suppress the inclusion of the ZB structure. By optimizing the growth conditions, the InGaN/GaN MQWs LED structures were grown. Clear emission was clearly observed under the operation of the current injection. As growth temperature for MQWs growth decreased, the emission color was successfully controlled from blue to red. These results will expand the high-efficient lighting based on LEDs.
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