Elucidation of formation mechanism of oxidation-induced fault in silicon carbide semiconductors
| Project/Area Number |
24560365
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Saitama University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
YAGUCHI Hiroyuki 埼玉大学, 理工学研究科, 教授 (50239737)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 炭化ケイ素(SiC)半導体 / 熱酸化 / 積層欠陥 / 転位 / 酸化界面 / SiおよびC原子放出現象 / フォトルミネッセンス / 分光偏光解析 / 炭化ケイ素半導体 |
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| Outline of Final Research Achievements |
For a better understanding of oxidation mechanism of silicon carbide (SiC), 1)Profiling of oxides on SiC, 2)Photoluminescence imaging of oxidized substrates, 3)Real-time observations of SiC oxidation processes have been performed. From result 1), we for the first time succeeded in the observation of “Si emission phenomenon” during oxidation of SiC from the oxidation interface to oxide. According to result 2), we found that there were stacking faults that are deformed by oxidation and there was a possibility that faults, which are similar to “oxidation-induced stacking fault” seen in Si oxidation, were also formed in Si oxidation. From result 3), a unified SiC oxidation model was established, and the formations of interface defect were simulated in terms of interface concentration of emitted Si and C atoms.
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Report
(4 results)
Research Products
(41 results)
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[Journal Article] Radiation Response of Silicon Carbide Metal-Oxide-Semiconductor Transistors in High Dose Region2015
Author(s)
T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie
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Journal Title
Japanese Journal of Applied Physics
Volume: -
NAID
Related Report
Peer Reviewed
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[Presentation] Radiation Response of Silicon Carbide Metal-Oxide-Semiconductor Transistors in High Dose Region2015
Author(s)
T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie
Organizer
ISPlasma2015
Place of Presentation
名古屋大学（愛知県・名古屋市）
Year and Date
2015-03-27
Related Report
Invited
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[Presentation] Gamma-Ray Irradiation Response of Silicon Carbide Semiconductor Devices: Extremely High Radiation Resistance2014
Author(s)
S. Sato, S. Onoda, T. Makino, N. Fujuta, T. Ohshima1, T. Yokoseki, K. Tanaka, Y. Hijikata, Y. Tanaka, M. Kandori, T. Yoshie
Organizer
7th International Youth Nuclear Congress
Place of Presentation
Burgos, Spain
Year and Date
2014-07-09
Related Report
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