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Spin devices having InAs nanowire / ferromagnetic metal hybrid structures formed by selective-area growth

Research Project

Project/Area Number 24560368
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionJapan Advanced Institute of Science and Technology

Principal Investigator

AKABORI Masashi  北陸先端科学技術大学院大学, ナノマテリアルテクノロジ-センター, 准教授 (50345667)

Co-Investigator(Renkei-kenkyūsha) YAMADA Syoji  北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 (00262593)
Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Keywords選択成長 / MBE / InAs / ナノワイヤ / FET / スピン / MnAs
Outline of Final Research Achievements

For the application of selective-area-grown InAs nanowires to spin devices, we carried out growth on (112)B substrates, formation of 50-nm-thick InAs nanowires by wet etching, and fabrication and characterization of nanowire transistors. Also as the technologies of ferromagnetic electrode formation and spin characterization, we carried out fabrication and characterization of CoFe-InGaAs non-local spin-valve devices, growth of MnAs/InAs/GaAs(111)B, and fabrication and characterization of transmission-line-model devices. As a result, we successfully obtained knowledge for spin device application.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Research-status Report
  • 2012 Research-status Report
  • Research Products

    (15 results)

All 2015 2014 2013 2012

All Journal Article (3 results) (of which Peer Reviewed: 3 results) Presentation (12 results) (of which Invited: 1 results)

  • [Journal Article] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2013

    • Author(s)
      M. Akabori and S. Yamada
    • Journal Title

      AIP Conf. Proc.

      Volume: 1566 Pages: 219-220

    • DOI

      10.1063/1.4848364

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Journal Article] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2013

    • Author(s)
      S. Hidaka, T. Kondo, M. Akabori and S. Yamada
    • Journal Title

      AIP Conf. Proc.

      Volume: 1566 Pages: 329-330

    • DOI

      10.1063/1.4848419

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Journal Article] High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices2012

    • Author(s)
      Shiro Hidaka, Masashi Akabori, and Syoji Yamada
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 11 Pages: 113001-113001

    • DOI

      10.1143/apex.5.113001

    • NAID

      10031126453

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Presentation] In(Ga)As系2DEG・ナノワイヤにおける伝導電子のスピン物性2015

    • Author(s)
      赤堀誠志
    • Organizer
      応用物理学会応用電子物性分科会研究例会
    • Place of Presentation
      首都大学東京秋葉原サテライトキャンパス(東京都千代田区)
    • Year and Date
      2015-06-23
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Contact properties of MnAs/InAs grown on GaAs(111)B by molecular beam epitaxy2015

    • Author(s)
      Md. E. Islam, C. T. Nguyen, M. Akabori
    • Organizer
      the 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2015-06-16 – 2015-06-19
    • Related Report
      2014 Annual Research Report
  • [Presentation] Molecular beam epitaxial growth of MnAs/ InAs/GaAs(111)B heterostructure2015

    • Author(s)
      C. T. Nguyen, Md. E. Islam, M. Akabori
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県相模原市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] 面内配向InAsナノワイヤのウェットエッチ狭窄2014

    • Author(s)
      グエン・コン・タン、赤堀誠志
    • Organizer
      平成26年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      富山大学五福キャンパス(富山県富山市)
    • Year and Date
      2014-11-07 – 2014-11-08
    • Related Report
      2014 Annual Research Report
  • [Presentation] In-plane oriented InAs nanowire field-effect transistors formed by combination of selective area molecular beam epitaxy and wet-etch thinning process2014

    • Author(s)
      C. T. Nguyen and M. Akabori
    • Organizer
      2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      金沢市文化ホール(石川県金沢市)
    • Year and Date
      2014-07-01 – 2014-07-03
    • Related Report
      2014 Annual Research Report
  • [Presentation] In-plane oriented InAs nanowire formation by selsctive area molecular beam epitaxy on GaAs (211)B substrates2013

    • Author(s)
      M. Akabori, T. Murakami, and S. Yamada
    • Organizer
      the 16th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      Wroclaw University of Technology (Wroclaw, Poland)
    • Related Report
      2013 Research-status Report
  • [Presentation] GaAs上の領域選択分子線成長による面内配向InAsナノワイヤの試作と電気的評価2013

    • Author(s)
      赤堀誠志、村上達也、山田省二
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      富山大学 (富山)
    • Related Report
      2013 Research-status Report
  • [Presentation] 領域選択分子線エピタキシーによるGaAs(211)Bマスク基板上への面内配向InAsナノワイヤの形成2013

    • Author(s)
      赤堀誠志、村上達也、山田省二
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学 (京田辺)
    • Related Report
      2013 Research-status Report
  • [Presentation] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2012

    • Author(s)
      S. Hidaka, T. Kondo, M. Akabori, and S. Yamada
    • Organizer
      the 31st International Conference on the Physics of Semiconductors
    • Place of Presentation
      Zurich, Switzerland
    • Related Report
      2012 Research-status Report
  • [Presentation] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2012

    • Author(s)
      M. Akabori and S. Yamada
    • Organizer
      the 31st International Conference on the Physics of Semiconductors
    • Place of Presentation
      Zurich, Switzerland
    • Related Report
      2012 Research-status Report
  • [Presentation] 強磁性電極/高In組成InGaAs-2次元電子系接合における非局所スピン注入のゲート電圧依存性2012

    • Author(s)
      日高志郎、近藤太郎、赤堀誠志、山田省二
    • Organizer
      日本物理学会2012秋季大会
    • Place of Presentation
      横浜
    • Related Report
      2012 Research-status Report
  • [Presentation] GaAs(110)上の選択成長により形成したInAsナノワイヤの電子輸送特性2012

    • Author(s)
      赤堀誠志、山田省二
    • Organizer
      日本物理学会2012秋季大会
    • Place of Presentation
      横浜
    • Related Report
      2012 Research-status Report

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Published: 2013-05-31   Modified: 2019-07-29  

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