| Project/Area Number |
24560368
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
AKABORI Masashi 北陸先端科学技術大学院大学, ナノマテリアルテクノロジ-センター, 准教授 (50345667)
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| Co-Investigator(Renkei-kenkyūsha) |
YAMADA Syoji 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 (00262593)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 選択成長 / MBE / InAs / ナノワイヤ / FET / スピン / MnAs |
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| Outline of Final Research Achievements |
For the application of selective-area-grown InAs nanowires to spin devices, we carried out growth on (112)B substrates, formation of 50-nm-thick InAs nanowires by wet etching, and fabrication and characterization of nanowire transistors. Also as the technologies of ferromagnetic electrode formation and spin characterization, we carried out fabrication and characterization of CoFe-InGaAs non-local spin-valve devices, growth of MnAs/InAs/GaAs(111)B, and fabrication and characterization of transmission-line-model devices. As a result, we successfully obtained knowledge for spin device application.
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