| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
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| Outline of Final Research Achievements |
We proposed new contact structure, inserting a graphene layer between metal and semiconductor to control the electrical characteristics. Since the size of the graphene layer is so small to cover the entire contact, we developed scanning internal photoemission microscopy for 2-dimentional mapping. We investigated Ni/graphene/n-GaN structure and found that graphene-inserted regions showed smaller Schottky barrier height. These results tell us that this structure is a candidate for better ohmic contacts to n-GaN.
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