2-dimentional mapping of graphene-inserted metal contacts
| Project/Area Number |
24560369
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | University of Fukui |
|---|
Principal Investigator |
SHIOJIMA Kenji 福井大学, 工学(系)研究科(研究院), 准教授 (70432151)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
HASHIMOTO Akihiro 福井大学, 大学院工学研究科, 教授 (10251985)
|
|---|
| Project Period (FY) |
2012-04-01 – 2015-03-31
|
| Project Status |
Completed (Fiscal Year 2014)
|
| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
|
|---|
| Keywords | 窒化ガリウム / グラフェン / ショットキー電極 / ２次元評価 / GaN / 電極 / 窒化物半導体 / 二次元評価 / 2次元評価 |
|---|
| Outline of Final Research Achievements |
We proposed new contact structure, inserting a graphene layer between metal and semiconductor to control the electrical characteristics. Since the size of the graphene layer is so small to cover the entire contact, we developed scanning internal photoemission microscopy for 2-dimentional mapping. We investigated Ni/graphene/n-GaN structure and found that graphene-inserted regions showed smaller Schottky barrier height. These results tell us that this structure is a candidate for better ohmic contacts to n-GaN.
|
Report
(4 results)
Research Products
(109 results)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[Book] Proceedings of the 8th International Conference on Silicon Epitaxy and Heterostructure (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)2014
Author(s)
Seiichi Miyazaki, Matty R. Caymax, Siegfried Mantl, Masanobu Miyao, Junichi Murota, Toshio Ogino, Tsugunori Okumura, Kenji Shiojima, James C. Sturm, Shinichi Takagi, Akira Toriumi, Kastuyoshi Washio, Ya-Hong Xie, Shigeaki Zaima
Total Pages
393
Publisher
Elsevier
Related Report
-
-
-
-
-
