Development of novel spin devices using half-metallic ferromagnet/diamond semiconductor heterojunctions
| Project/Area Number |
24560372
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University |
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Principal Investigator |
UEDA Kenji 名古屋大学, 工学(系)研究科(研究院), 准教授 (10393737)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | スピントロニクス / 半導体 / ダイヤモンド / ハーフメタル / ホイスラー / スピンデバイス / スピン注入 / ショットキー / 強磁性 / ダイヤモンド半導体 / ホイスラー合金 / スピントランジスタ / ショットキー接合 |
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| Outline of Final Research Achievements |
In this study, we tried injecting spin polarized carriers efficiently from ferromagnets into semiconductors by combining diamond, which expected to have long spin diffusion length, and half-metallic Co2MnSi (CMS), which has high spin polarization. We found abrupt half-metallic CMS/diamond interfaces can be obtained by low temperature growth of CMS at around 300℃ and also observed spin signals by 3-terminal Hanle measurements, which was related to spin injection into diamond semiconductors. By the measurements, spin relaxation time was estimated to be 7 ns, which was relatively larger if we consider the value was obtained for heavily impurity doped semiconductors.
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Report
(4 results)
Research Products
(43 results)
