| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Outline of Final Research Achievements |
New tunneling phenomena in nano-sized ferroeletcric thin films have been expected to apply for the universal memory with high density and without degradation. However, the phenomena have not been revealed for device applications, sufficiently. Thus, high quality ferroelectric nano-crystalline multilayers have been required for the development. In this study, newly developed sputtering technique was subjected to depositions of ferroelectric and metal nano-crystals. From the optimization of the deposition conditions and the improvement of sputtering equipments, high quality nano-crystals of several ferroelectric materials with uniform size and position can be obtained, in first step of this study. Consequently, the nano-sheet and their multilayer structure can also be fabricated, and nano-region and high current sensitivity observations in obtained specimens were also performed, successfully.
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