Study on double spin-filter tunnel barrier growth and hole spin injector

• Project/Area Number: 24560375
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Yamaguchi University
• Principal Investigator: ASADA HIRONORI 山口大学, 理工学研究科, 准教授 (70201887)
• Co-Investigator(Kenkyū-buntansha): SENBA Shinya 宇部工業高等専門学校, 電気工学科, 准教授 (40342555)
• Co-Investigator(Renkei-kenkyūsha): KOYANAGI Tsuyoshi 山口大学, 大学院理工学研究科, 教授 (90178385)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000); Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: スピンフィルタ / 強磁性半導体

Outline of Final Research Achievements

We have grown a double spin-filter structure combining the ferromagnetic semiconductor EuS barrier with the p-type semiconductor GeTe by molecular beam epitaxy and obtained fully epitaxial GeTe/EuS/GeTe/EuS/GeTe multilayers. On InP(100) substrates, thought the EuS film exhibits (111) orientation growth, it is found that Te doped EuS grows in the substrate orientation. A thin EuS layer, which has the almost same thickness as the spin-filter tunnel barrier, has directly grown on semiconductor InP(100) substrates and the fully epitaxial EuS/GeTe(100) multilayer is obtained.

Research Products

• [Journal Article] Characterization of epitaxial EuS(111) thin films on BaF2(111) and SrF2(111) substrates grown by molecular beam epitaxy (2013)
  • Author(s): S. Senba, N. Matsumoto, M. Jomura, H. Asada, Y. Fukuma, T. Koyanagi, K. Kishimoto
  • Journal Title: Journal of the Korean Physical Society Volume: 62 Issue: 12 Pages: 2109-2112
  • DOI: 10.3938/jkps.62.2109
  • Peer Reviewed
• [Presentation] Influence of substituting Te for S on magnetization of EuS thin films (2015)
  • Author(s): S. Senba, Y. Ueda, R. Kakimaru, S. Sakawaki. H. Asada, K. Kishimoto, T. Koyanagi
  • Organizer: 20thInternational Conference on Magnetism
  • Place of Presentation: バルセロナ（スペイン）
  • Year and Date: 2015-07-06 – 2015-07-10
• [Presentation] InP基板上へのGeTe成長におけるEuSバッファ層の効果 (2014)
  • Author(s): 坂脇生哉, 浅田裕法, 冨田知大, 仙波伸也, 岸本堅剛, 小柳剛
  • Organizer: 2014年度応用物理・物理系学会中国四国支部合同学術講演会
  • Place of Presentation: 島根大学(松江市）
  • Year and Date: 2014-07-28
• [Presentation] MBE法によるBaF2基板上への閃亜鉛鉱型MnTeの成長 (2014)
  • Author(s): 前川亮介, 冨田知大, 仙波伸也, 西村謙祐, 浅田裕法, 岸本堅剛, 小柳剛
  • Organizer: 2014年度応用物理・物理系学会中国四国支部合同学術講演会
  • Place of Presentation: 島根大学(松江市）
  • Year and Date: 2014-07-28
• [Presentation] MBE法によるInP(100)基板上へのTeドープEuS薄膜の成長 (2013)
  • Author(s): 植田, 松本, 今泉, 柿丸, 仙波, 浅田, 岸本, 小柳
  • Organizer: 2013年度応用物理・物理系学会中国四国支部合同学術講演会
  • Place of Presentation: 香川大学(高松市)
• [Presentation] Characterization of Epitaxial EuS(111) Thin Films on BaF2(111) and SrF2(111) Substrates Grown By Molecular Beam Epitaxy (2012)
  • Author(s): S. Senba, N. Matsumoto, M. Jomura, H. Asada, Y. Fukuma, T. Koyanagi, and K. Kishimoto
  • Organizer: The 19th International Conference oｎ Magnetism
  • Place of Presentation: Ｂｕｓａｎ，Ｋｏｒｅａ
• [Presentation] MBE法によるTeドープEuS薄膜の成長 (2012)
  • Author(s): 植田, 松本, 仙波, 浅田, 岸本, 小柳
  • Organizer: 2012年度応用物理学会中国四国支部学術講演会
  • Place of Presentation: 山口大学（宇部市）
• [Presentation] InP基板上へのEuS薄膜の成長と結晶性評価 (2012)
  • Author(s): 今泉, 植田, 松本, 仙波, 浅田, 岸本, 小柳
  • Organizer: 2012年度応用物理学会中国四国支部学術講演会
  • Place of Presentation: 山口大学（宇部市）
• [Presentation] MBE growth of ferromagnetic EuS thin film on InP(100) substrate (2012)
  • Author(s): Y. Ueda, T. Rakumatsu, N. Matsumoto, Y. Kawano, S. Senba, H. Asada, Y. Fukuma, K. Kishimoto, T. Koyanagi
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Nara Prefectural New Public Hall（Ｎａｒａ，Ｊａｐａｎ）