Study on double spin-filter tunnel barrier growth and hole spin injector
| Project/Area Number |
24560375
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Yamaguchi University |
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Principal Investigator |
ASADA HIRONORI 山口大学, 理工学研究科, 准教授 (70201887)
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| Co-Investigator(Kenkyū-buntansha) |
SENBA Shinya 宇部工業高等専門学校, 電気工学科, 准教授 (40342555)
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| Co-Investigator(Renkei-kenkyūsha) |
KOYANAGI Tsuyoshi 山口大学, 大学院理工学研究科, 教授 (90178385)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | スピンフィルタ / 強磁性半導体 |
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| Outline of Final Research Achievements |
We have grown a double spin-filter structure combining the ferromagnetic semiconductor EuS barrier with the p-type semiconductor GeTe by molecular beam epitaxy and obtained fully epitaxial GeTe/EuS/GeTe/EuS/GeTe multilayers. On InP(100) substrates, thought the EuS film exhibits (111) orientation growth, it is found that Te doped EuS grows in the substrate orientation. A thin EuS layer, which has the almost same thickness as the spin-filter tunnel barrier, has directly grown on semiconductor InP(100) substrates and the fully epitaxial EuS/GeTe(100) multilayer is obtained.
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Report
(4 results)
Research Products
(9 results)
