Development of Spin Seebeck Devices
Project/Area Number |
24560376
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
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Research Institution | Yamaguchi University |
Principal Investigator |
|
Co-Investigator(Kenkyū-buntansha) |
KISHIMOTO Kengo 山口大学, 大学院理工学研究科, 助教 (50234216)
ASADA Hironori 山口大学, 大学院理工学研究科, 准教授 (70201887)
|
Project Period (FY) |
2012-04-01 – 2015-03-31
|
Project Status |
Completed (Fiscal Year 2014)
|
Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
|
Keywords | スピン流 / スピン・ゼーベック効果 / 異常ネルンスト効果 / 磁性ガーネット / 磁性半導体 / 薄膜 / MOD法 / MBE法 / 磁性絶縁体 / ガーネット / 酸化物磁性絶縁体 / 逆スピン・ホール効果 |
Outline of Final Research Achievements |
We studied on the spin Seebeck effects for garnet ferrite films and the anomalous Nernst effects for magnetic semiconductor films for the purpose of clarifying the energy conversion mechanism using spin currents and developing the new energy conversion devices. The measurement equipment for both effects at low temperatures was developed to carry out our study. The garnet ferrite films were deposited by the metal organic decomposition (MOD) method, and the relation between their compositions and spin Seebeck effects was made clear. For the magnetic semiconductor films prepared by the molecular beam epitaxy (MBE) method, the anomalous Nernst effects was observed, and was investigated based on the Mott relation and the Boltzmann equation.
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Report
(4 results)
Research Products
(6 results)