Research on non-C-oriented green laser diodes with cleaved facet cavity mirrors

• Project/Area Number: 24560385
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kanazawa Institute of Technology
• Principal Investigator: YAMAGUCHI Atsushi A. 金沢工業大学, 工学部, 教授 (60449428)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2012: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
• Keywords: 半導体レーザ / 窒化物半導体 / 光学利得 / 価電子帯 / 偏光特性 / GaN / へき開共振器ミラー

Outline of Final Research Achievements

Device strucutral design is very important for realizing high-performance and low-cost pure-green semiconductor laser diodes. In this work, reliability of material parameters which are used for the calculation of the structural design, has been investigated theoretically and experimentally. It is found that the reported parameters based on polarization-resolved PL measurements are not reliable due to large potential fluctuation in InGaN alloy material, and that polarization-resolved PLE measurements are needed for the precise determination of the parameters.

Research Products

• [Journal Article] Theoretical Analysis of Optical Polar-ization Properties in Semipolar and Nonpolar InGaN Quantum Wells for Precise Determination of Valence-Band Parameters in InGaN Alloy Material (2015)
  • Author(s): Shigeta Sakai, Atsushi A. Yamaguchi
  • Journal Title: Physica Status Solidi B Volume: 252 Issue: 5 Pages: 885-889
  • DOI: 10.1002/pssb.201451594
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] 非極性InGaN量子井戸の偏光特性 (2014)
  • Author(s): 坂井繁太、山口敦史、栗原 香、長尾 哲
  • Journal Title: 信学技報 Volume: 114 Pages: 23-26
• [Presentation] Optical Polarization Properties in Nonpolar InGaN Quantum Wells (2015)
  • Author(s): Atsushi A. Yamaguchi, Shigeta Sakai, Kaori Kurihara, and Satoru Nagao
  • Organizer: Energy Materials Nanothechnology East Meeting 2015
  • Place of Presentation: Beijing, China
  • Year and Date: 2015-04-22
  • Invited
• [Presentation] Effects of Alloy Compositional Fluctu-ation on Optical Polarization Properties in Nonpolar InGaN Quantum Wells (2014)
  • Author(s): Shigeta Sakai, Atsushi A. Yamaguchi, Kaori Kurihara, and Satoru Nagao
  • Organizer: the 10th International Symposium on Semi-conductor Light Emitting Devices
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-18
• [Presentation] 非極性InGaN量子井戸の偏光特性 (2014)
  • Author(s): 坂井繁太、山口敦史、栗原 香、長尾 哲
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
  • Place of Presentation: 大阪大学
  • Year and Date: 2014-11-27
• [Presentation] Theoretical Study of Optical Gain Characteristics in InGaN Pure-Green Laser Diodes on Semipolar GaN Substrates (2014)
  • Author(s): Atsushi A. Yamaguchi, Shigeta Sakai
  • Organizer: Energy Material Nan-otechnology Open Ac-cess Week Meeting
  • Place of Presentation: Chengdu, China
  • Year and Date: 2014-09-23
  • Invited
• [Presentation] In組成の空間的ゆらぎが非極性InGaN量子井戸の偏光特性へ及ぼす影響 (2014)
  • Author(s): 坂井繁太, 山口敦史, 栗原香, 長尾 哲
  • Organizer: 2014年秋季 第75 回応用物理学会学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-19
• [Presentation] Theoretical Analysis of Optical Polar-ization Properties in Semipolar and Nonpolar InGaN Quantum Wells for Precise Determination of Valence-Band Parameters in InGaN Alloy Material (2014)
  • Author(s): S. Sakai, A.A. Yama-guchi
  • Organizer: International Work-shop on Nitride sem-iconductors
  • Place of Presentation: Wroclaw, Poland
  • Year and Date: 2014-08-26
• [Presentation] Theoretical Prediction of Optical Gain Characteristics in InGaN Green Laser Diodes Fabricated on Low-Angle Semipolar GaN Substrates (2014)
  • Author(s): Atsushi A. Yamaguchi and Shigeta Sakai
  • Organizer: 2014 Asia-Pacific Workshop on Funda-mentals and Applica-tions of Advanced Semiconductor Devic-es
  • Place of Presentation: Kanazawa, Japan
  • Year and Date: 2014-07-01
• [Presentation] Theoretical Prediction of Optical Gain Characteristics in InGaN Green Laser Diodes Fabricated on Low-Angle Semipolar GaN Substrates (2014)
  • Author(s): Atsushi A. Yamaguchi and Shigeta Sakai
  • Organizer: 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Kanazawa, Japan
• [Presentation] Theoretical Studies on Anisotropic Op-tical Gain Characteristics in Semipo-lar-Oriented InGaN Quantum-Well Laser Diodes (2013)
  • Author(s): Shigeta Sakai and Atsushi A. Yamaguchi
  • Organizer: 6th Asia-Pacific Workshop on Widegap Semiconductor 2013
  • Place of Presentation: New Taipei City, Taiwan
• [Presentation] Theoretical Studies on Anisotropic Optical Gain Characteristics in Semipolar-Oriented InGaN Quantum-Well Laser Diodes (2013)
  • Author(s): Shigeta Sakai and Atsushi A. Yamaguchi
  • Organizer: 6th Asia-Pacific Workshop on Widegap Semiconductor 2013
  • Place of Presentation: New Taipei City, Taiwan
• [Presentation] Optical polarization and anisotropic gain characteristics in semipolar and nonpolar InGaN quantum well lasers (2012)
  • Author(s): Atsushi A. Yamaguchi
  • Organizer: Photonics Global Conference 2012
  • Place of Presentation: Singapore
  • Invited