Research on non-C-oriented green laser diodes with cleaved facet cavity mirrors
| Project/Area Number |
24560385
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | 半導体レーザ / 窒化物半導体 / 光学利得 / 価電子帯 / 偏光特性 / GaN / へき開共振器ミラー |
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| Outline of Final Research Achievements |
Device strucutral design is very important for realizing high-performance and low-cost pure-green semiconductor laser diodes. In this work, reliability of material parameters which are used for the calculation of the structural design, has been investigated theoretically and experimentally. It is found that the reported parameters based on polarization-resolved PL measurements are not reliable due to large potential fluctuation in InGaN alloy material, and that polarization-resolved PLE measurements are needed for the precise determination of the parameters.
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Report
(4 results)
Research Products
(13 results)
