| Project/Area Number |
24560386
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Kanazawa Institute of Technology |
|---|
Principal Investigator |
Endo Kazuhiro 金沢工業大学, 工学(系)研究科(研究院), 教授 (50356606)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
立木 昌 東北大学, 理学(系)研究科(研究院), 客員研究員 (20028111)
有沢 俊一 独立行政法人物質・材料研究機構, 超伝導ユニット, 主幹研究員 (00354340)
|
|---|
| Project Period (FY) |
2012-04-01 – 2015-03-31
|
| Project Status |
Completed (Fiscal Year 2014)
|
| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2012: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
|
|---|
| Keywords | MOCVD法 / ビスマス系酸化物超伝導体 / 薄膜 / 配向制御 / テラヘルツ素子 / テラヘルツ発振 / 高温超伝導 |
|---|
| Outline of Final Research Achievements |
We prepared Bi-based oxide superconductor films on single crystal substrates of low dielectric constant targeting fabrication of high-power terahertz devices. We used our originally developed MOCVD apparatus. The as-obtained films were characterized in detail from the structural viewpoint. In this respect, we developed and applied a new X-ray diffraction method. We found that our films are of high-quality, twin-free single crystal non-c-axis oriented epitaxial films. Some films were with the c-axis inclined approximately 45 degrees to the surface of the substrate. In other cases, we have grown a-axis oriented films. To our knowledge, the growth of a-axis oriented Bi-2223 thin films is demonstrated for the first time.
The non-c-axis and a-axis oriented films enable fabrication of novel device structures expected to be the epoch-making high-power THz devices. The long awaited break through is focused especially on the coherent THz emission devices.
|
