| Project/Area Number |
24560390
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | National Institute of Advanced Industrial Science and Technology |
|---|
Principal Investigator |
MAEDA Tatsuro 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員 (40357984)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
YASUDA Tetsuji 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究部門長 (90220152)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
TANAKA Masatoshi 国立大学法人横浜国立大学, 工学研究院, 教授 (90130400)
|
|---|
| Project Period (FY) |
2012-04-01 – 2015-03-31
|
| Project Status |
Completed (Fiscal Year 2014)
|
| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
|
|---|
| Keywords | 高移動度チャネル / ゲルマニウム / ゲートスタック / 窒化物 / 非酸化物 / 高移動度チャネル材料 / 窒化膜 / スパッタリング / 窒化ハフニウム / 窒化膜ゲートスタック / ハフニウム窒化物 |
|---|
| Outline of Final Research Achievements |
In this study, we investigate the material potential of HfNx films as a gate material as well as a metal gate for germanium metal-insulator-semiconductor (Ge-MIS) structure. We demonstrate the capabilities of reactive DC magnetron sputtering to control the electrical behavior of HfNx films from metal (~349uΩcm) to insulator only by changing nitrogen flow rate. To investigate the electrical properties of all nitride Ge gate stacks, we fabricate Ge MIS structures straightforwardly by sequential deposition of insulator-HfNx and metal-HfNx on Ge substrate. It is found that insulating HfNx film shows a high-k value of 15~20 with the bandgap of 2.9 eV and the insulator-HfNx/Ge interface shows an excellent interface quality with low interface trap of 4E12cm-2eV-1. We therefore address that insulating and metallic HfNx films have a high potential as gate insulator and metal in non-oxide Ge MIS structures.
|
