Study of all nitride gate stack with Metal and Insulator HfNx for high mobility channel
| Project/Area Number |
24560390
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
MAEDA Tatsuro 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員 (40357984)
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| Co-Investigator(Kenkyū-buntansha) |
YASUDA Tetsuji 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究部門長 (90220152)
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| Co-Investigator(Renkei-kenkyūsha) |
TANAKA Masatoshi 国立大学法人横浜国立大学, 工学研究院, 教授 (90130400)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 高移動度チャネル / ゲルマニウム / ゲートスタック / 窒化物 / 非酸化物 / 高移動度チャネル材料 / 窒化膜 / スパッタリング / 窒化ハフニウム / 窒化膜ゲートスタック / ハフニウム窒化物 |
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| Outline of Final Research Achievements |
In this study, we investigate the material potential of HfNx films as a gate material as well as a metal gate for germanium metal-insulator-semiconductor (Ge-MIS) structure. We demonstrate the capabilities of reactive DC magnetron sputtering to control the electrical behavior of HfNx films from metal (~349uΩcm) to insulator only by changing nitrogen flow rate. To investigate the electrical properties of all nitride Ge gate stacks, we fabricate Ge MIS structures straightforwardly by sequential deposition of insulator-HfNx and metal-HfNx on Ge substrate. It is found that insulating HfNx film shows a high-k value of 15~20 with the bandgap of 2.9 eV and the insulator-HfNx/Ge interface shows an excellent interface quality with low interface trap of 4E12cm-2eV-1. We therefore address that insulating and metallic HfNx films have a high potential as gate insulator and metal in non-oxide Ge MIS structures.
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Report
(4 results)
Research Products
(8 results)
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[Journal Article] Solid phase epitaxy of GeSn alloys on silicon and integration in MOSFET devices2014
Author(s)
Ruben R. Lieten, Tatsuro Maeda, Jin Won Seo, Wipakorn Jevasuwan, Hiroyuki Hattori, Noriyuki Uchida, Shu Miura, Masatoshi Tanaka, Claudia Fleischmanna, Andre Vantomme, Brett C. Johnson, Jean-Pierre Locquet
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Journal Title
ECS Transactions
Volume: 64
Pages: 149-160
Related Report
Peer Reviewed
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