Detail evaluation of electron velocity in GaN HEMTs
| Project/Area Number |
24560392
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 窒化物半導体 / 電界効果トランジスタ / マイクロ波・ミリ波 / 窒化物トランジスタ / GaN / トランジスタ |
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| Outline of Final Research Achievements |
The electron velocity in gallium nitride (GaN) high electron mobility transistors (HEMTs), which is one of important parameters to estimate the high-frequency characteristics of the transistors, is evaluated by means of the gate delay time analysis in the samples with different gate/field plate structures. The drain depletion region is clearly separated from the gate depletion region through the gate delay time analysis of these samples. The result suggests an electron velocity of 1.21-1.27 x 10^7 cm/s in 180-nm-gate GaN HEMTs.
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Report
(4 results)
Research Products
(14 results)
