| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
The electron velocity in gallium nitride (GaN) high electron mobility transistors (HEMTs), which is one of important parameters to estimate the high-frequency characteristics of the transistors, is evaluated by means of the gate delay time analysis in the samples with different gate/field plate structures. The drain depletion region is clearly separated from the gate depletion region through the gate delay time analysis of these samples. The result suggests an electron velocity of 1.21-1.27 x 10^7 cm/s in 180-nm-gate GaN HEMTs.
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