Resonant-Tunneling-diode Terahertz Oscillator with Functional Heterostructure for High Performance
Project/Area Number |
24560398
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
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Research Institution | Tokyo Institute of Technology |
Principal Investigator |
SUZUKI Safumi 東京工業大学, 理工学研究科, 准教授 (40550471)
|
Project Period (FY) |
2012-04-01 – 2015-03-31
|
Project Status |
Completed (Fiscal Year 2014)
|
Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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Keywords | 共鳴トンネルダイオード / テラヘルツ発振器 / テラヘルツ / 発振器 / スロットアンテナ |
Outline of Final Research Achievements |
Terahertz oscillators with Resonant tunneling diodes (RTDs) and slot antennas were investigated for high frequency and high output power. To obtain high-frequency oscillation, we optimized the thickness of the collector spacer layer, for which a trade-off relation exists in terms of the reduction of the electron transit time and capacitance. A narrow quantum well for short dwell time and an antenna structure for low conduction loss were also employed. By these procedures, room-temperature fundamental oscillation of up to 1.92 THz was achieved. To date, this is the highest oscillation frequency in a single solid-state electronic oscillator. For high-output power operation of the RTD oscillators, we employed offset-fed slot antenna for impedance matching between RTD and antenna, and also utilized power combination technique with array configuration. To date, 610 μW has been obtained in a preliminary experiment performed at 620 GHz using a two-element array of the offset slot antennas.
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Report
(4 results)
Research Products
(59 results)