• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Development of monolithically integrated high-sensitive SOI photodiode

Research Project

Project/Area Number 24560401
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionShizuoka University

Principal Investigator

ONO ATSUSHI  静岡大学, 電子工学研究所, 准教授 (20435639)

Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Keywordsフォトダイオード / 表面プラズモン / SOI / 金ナノ粒子 / プラズモン
Outline of Final Research Achievements

The purpose of this research is the monolithic implementation of photodiode with silicon-on-insulator (SOI) circuits. SOI-CMOS technology is one of the promising techniques for LSI to perform high speed operation.
To improve the sensitivity of SOI photodiode, we developed SOI-PIN photodiode attached with gold (Au) nano particles. The diameter and the density of Au nano particles were optimized by simulation. Furthermore, we clarified the enhancement mechanism. During this research, we fabricated SOI photodiode with Au nano particles and measured the sensitivity. It has been demonstrated that two-fold enhancement was achieved in visible wavelength region by the attachment of Au nano particles.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Research-status Report
  • 2012 Research-status Report
  • Research Products

    (5 results)

All 2014 2013 2012

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (3 results) (of which Invited: 1 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Broadband absorption enhancement of thin SOI photodiode with high-density gold nano particles2014

    • Author(s)
      Atsushi Ono, Yasushi Enomoto, Yasufumi Matsumura, Hiroaki Satoh, and Hiroshi Inokawa
    • Journal Title

      Optical Materials Express

      Volume: 4 Issue: 4 Pages: 725-732

    • DOI

      10.1364/ome.4.000725

    • NAID

      120005479949

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Presentation] 金ナノ粒子高密度配列による高感度SOIフォトダイオードの開発2014

    • Author(s)
      小野 篤史, 榎本 靖, 松村 康史, 佐藤 弘明, 猪川 洋
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] Sensitivity Enhancement of SOI Photodiode with Randomly Arranged Au Nanoparticles2013

    • Author(s)
      Atsushi Ono, Yasushi Enomoto, Yasufumi Matsumura, Hiroaki Satoh, and Hiroshi Inokawa
    • Organizer
      2013 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Hilton Fukuoka Sea Hawk (Fukuoka, Japan)
    • Related Report
      2013 Research-status Report
  • [Presentation] Plasmonics for enhanced performance of SOI photodiode2012

    • Author(s)
      Atsushi Ono, Hiroaki Satoh, and Hiroshi Inokawa
    • Organizer
      3rd International Conference on Photonics 2012
    • Place of Presentation
      PARKROYAL Penang Resort Hotel (Malaysia)
    • Related Report
      2012 Research-status Report
    • Invited
  • [Patent(Industrial Property Rights)] フォトダイオード及びその製造方法2012

    • Inventor(s)
      榎本靖,松村康史,猪川洋,小野篤史,佐藤弘明
    • Industrial Property Rights Holder
      新日鐵化学株式会社
    • Industrial Property Rights Type
      特許
    • Filing Date
      2012-09-27
    • Related Report
      2012 Research-status Report

URL: 

Published: 2013-05-31   Modified: 2019-07-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi