| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
Diffusion of self-atoms and co-implanted carbon (C) and boron (B) in silicon (Si) has been simultaneously observed using Si isotope heterostructures to directly observe the behavior of Si self-interstitials (I’s) in Si. The experimental results showed that Si self-diffusion was enhanced, that is, the I is more severely supersaturated, nevertheless B diffusion is retarded due to the increase of the amount of immobile B by the presence of C. On the other hand, when the sample is preamorphized by ion implantation, C atoms become substitutional to trap excess I, and therefore, dopant diffusion is retarded. These results lead to a simulation model to correctly predict the retardation of dopant diffusion by co-implanted C.
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