Diffusion control in silicon by co-implanted carbon
| Project/Area Number |
24560413
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Keio University |
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Principal Investigator |
UEMATSU Masashi 慶應義塾大学, 理工学研究科, 特任教授 (60393758)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | シリコン / 不純物 / 拡散 / ホウ素 / 炭素 / イオン注入 / 安定同位体 / シミュレーション |
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| Outline of Final Research Achievements |
Diffusion of self-atoms and co-implanted carbon (C) and boron (B) in silicon (Si) has been simultaneously observed using Si isotope heterostructures to directly observe the behavior of Si self-interstitials (I’s) in Si. The experimental results showed that Si self-diffusion was enhanced, that is, the I is more severely supersaturated, nevertheless B diffusion is retarded due to the increase of the amount of immobile B by the presence of C. On the other hand, when the sample is preamorphized by ion implantation, C atoms become substitutional to trap excess I, and therefore, dopant diffusion is retarded. These results lead to a simulation model to correctly predict the retardation of dopant diffusion by co-implanted C.
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Report
(4 results)
Research Products
(12 results)
