High-Speed and Low Power Consumption AD Converter Using Neuron MOSFET
| Project/Area Number |
24560416
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokai University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
YAHARA Mitsutoshi 東海大学, 福岡短期大学, 教授 (30259692)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
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| Keywords | AD変換器 / ニューロンMOSFET / 集積回路 / ニューロンCMOS / FGMOS / ニューロンCMOSインバータ / クロックドCMOS / ＡＤ変換器 / ニューロンＣＭＯＳ / ＦＧＭＯＳ / ニューロンＣＭＯＳインバータ / ＡＤ変換 / ニューロンＭＯＳ / フローティングゲート |
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| Outline of Final Research Achievements |
In this study, we considered about the proper constitution of a neuron CMOS inverter as a determination unit of the voltage level with an A/D converter. As a result, it has found that an initial charge cancel circuit is necessary to obtain the accurate the threshold voltage level. Furthermore, we constituted 4 types of A/D converter and confirmed that can obtain these expected results through SPICE simulations and experiments concerning the fabricated IC chips.
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Report
(4 results)
Research Products
(8 results)
