| Project/Area Number |
24560422
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kanagawa University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SAMESHIMA Toshiyuki 東京農工大学, 共生科学技術研究院, 教授 (30271597)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2013: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2012: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
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| Keywords | 電子デバイス / 集積回路 / 半導体物性 / マイクロ・ナノデバイス |
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| Outline of Final Research Achievements |
We experimentally studied two-dimensional Si layers (2D-Si) for future CMOS. We clearly observed very broad UV-Raman spectrum of 2D-Si in the lower wave number region, which is attributable to the phonon confinement effects. This Raman spectrum broadening increases with decreasing 2D-Si thickness T. In addition, by PL method, we confirmed that the bandgap E of 2D-Si rapidly increases with decreasing T, and E at T=0.5nm reaches over 1.7eV. Moreover, the E of doped 2D-Si slightly decreases with increasing dopant density. However, this E narrowing effect of 2D-Si is reduced, compared to that of 3D-Si, which is possibly attributable to the impurity band modulation in the 2D-Si. Therefore, it is very important to consider the quantum confinement effects in designing future CMOS devices composed of 2D-Si.
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