Output-Laser-Beams Controlled Semiconductor Lasers with Low-Threshold-Current for Large Capacity Lightwave Transmission and Optical Information Processing
| Project/Area Number |
24560429
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Ritsumeikan University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
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| Keywords | 半導体レーザー / 横モード |
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| Outline of Final Research Achievements |
Semiconductor lasers with an oscillation wavelength of 0.98 micron, which are used as pumping sources of Er-doped optical fiber amplifiers, have ridge structures, because they use Al contained semiconductor layers. In ridge structure semiconductor lasers, with an increase in injected current, higher-order horizontal transverse modes lase; kinks appear in their current versus light-output curves. Below the kink level, the fundamental horizontal transverse mode is obtained; above the kink level, higher order horizontal transverse modes oscillate. To increase the kink levels and lower the threshold current, we have proposed and analyzed ridge structures with coupled waveguides, selective insulating cladding layers, and partially insulated transverse diffraction gratings. It was found that stable fundamental horizontal transverse mode is obtained and threshold current is lower than that of conventional ridge structure semiconductor lasers.
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Report
(4 results)
Research Products
(24 results)
