Development of a ZnO avalanche photodiode toward a feeble ultraviolet detection

• Project/Area Number: 24560433
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Iwate Industrial Research Institute
• Principal Investigator: ENDO Haruyuki 地方独立行政法人岩手県工業技術センター, その他部局等, 研究員 (30504229)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000); Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000); Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
• Keywords: ショットキーフォトダイオード / 酸化亜鉛 / アバランシェ増倍 / 分子線エピタキシー法 / MBE / MgxZn1-xO薄膜 / Pt/ZnOショットキーフォトダイオード / フィールドプレート構造 / MgZnO薄膜 / 紫外線センサ / ZnO / MgZnO / ショットキーダイオード / エピタキシャル成長 / 炎検出 / MEMS

Outline of Final Research Achievements

In this report, the photoresponse of a Pt/MgxZn1-xO Schottky photodiode using a (0001) ZnO single crystal substrate for a feeble ultraviolet detection is described.
MgxZn1-xO thin films for an ultraviolet receiving portion were prepared by a radical source molecular beam epitaxy method on the Zn-face of the ZnO single crystal substrate. The prepared MgxZn1-xO thin films had a band gap range from 3.8 eV to 4.5 eV controlled by the Mg and Zn composition ratio. The fabricated Schottky photodiode had high responsivity in the wavelength shorter than 280 nm. The avalanche multiplication in the Pt/MgxZn1-xO Schottky photodiode is demonstrated.

Research Products

• [Journal Article] Investigation of ZnO thin films deposited on ferromagnetic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions (2013)
  • Author(s): M. Belmoubarik, T. Nozaki, H Endo, and M. Sahashi
  • Journal Title: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 17
  • DOI: 10.1063/1.4794875
  • Peer Reviewed
• [Presentation] Pt/MgxZn1-xO/n+-ZnOショットキーフォトダイオードの分光感度特性 (2015)
  • Author(s): 遠藤治之、佐藤秀幸、 Belmoubarik Mohamed、高橋強、野崎友大、佐橋政司、柏葉安兵衛
  • Organizer: 2015年第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2015-03-12
• [Presentation] RS-MBE法によるMgxZn1-xO薄膜の成膜とPt/MgxZn1-xOショットキーダイオードの作製 (2014)
  • Author(s): 遠藤治之、大橋律男、佐藤秀幸、 Belmoubarik Mohamed、高橋強、野崎友大、佐橋政司、柏葉安兵衛
  • Organizer: 第75回 応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-20
• [Presentation] Study on I-V Characteristics of Co0.3Pt0.7 Ferromagnet/MgxZn1-xO Hetero-Junctions toward Electrical Controlled Multi-State MTJ (2014)
  • Author(s): H. Sato, M. Belmoubarik, H. Endo, T. Nozaki, and M. Sahashi
  • Organizer: 2014 International Magnetics Conference
  • Place of Presentation: Dresden, Germany
  • Year and Date: 2014-05-07
• [Presentation] Resistive switching behaviour in ferromagnetic Co0.3Pt0.7/MgxZn1-xO interfaces by electric field toward a multi-state MTJ (2014)
  • Author(s): H. Sato, M. Belmoubarik, H. Endo, T. Nozaki1, M. Sahashi1
  • Organizer: 8th International Symposium on Medical, Bio- and Nano-Electronics 5th International Workshop on Nanostructures & Nanoelectronics
  • Place of Presentation: Tohoku University
• [Presentation] Study on Tunneling Magneto-Resistance in Hexagonal MgxZn1-xO based MTJs Prepared by Molecular Beam Epitaxy (2014)
  • Author(s): M. Belmoubarik, H. Sato1, H. Endo, T. Nozaki, M. Sahashi
  • Organizer: 8th International Symposium on Medical, Bio- and Nano-Electronics 5th International Workshop on Nanostructures & Nanoelectronics
  • Place of Presentation: Tohoku University
• [Presentation] Pt/ZnOショットキーフォトダイオードにおける逆バイアス特性の改善 (2014)
  • Author(s): 遠藤治之，大橋律男， 阿部貴志，高橋強，柏葉安兵衛
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
• [Presentation] Breakdown Characteristics in a Pt/ZnO Schottky Photodiode (2013)
  • Author(s): H. Endo, R. Ohashi, T. Abe, K. Takahashi, Y. Kashiwaba
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: Doshisha University
• [Presentation] 強磁性Co3Pt7上のMgドープZnO薄膜の抵抗率と結晶配向性 (2013)
  • Author(s): 佐藤秀幸、Belmoubarik Mohamed、遠藤治之、野崎友大、佐橋政司
  • Organizer: 8th International Symposium on Medical, Bio- and Nano-Electronics 5th International Workshop on Nanostructures & Nanoelectronics
  • Place of Presentation: 岩手大学
• [Presentation] Pt/ZnOショットキーフォトダイオードのI-V特性 (2013)
  • Author(s): 遠藤治之，大橋律男，阿部貴志，高橋強，柏葉安兵衛
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] RS-MBE法によるZnO薄膜の成膜とPt/ZnOショットキーフォトダイオードの作製 (2012)
  • Author(s): 遠藤治之，大橋律男，Belmoubarik Mohamed， 阿部貴志，高橋強，野崎友大，佐橋政司，柏葉安兵衛
  • Organizer: 秋季 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学