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Radiation-induced increase in local temperature and its effects on soft error tolerance

Research Project

Project/Area Number 24560435
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionJapan Aerospace Exploration Agency

Principal Investigator

KOBAYASHI Daisuke  独立行政法人宇宙航空研究開発機構, 宇宙科学研究所, 助教 (90415894)

Co-Investigator(Renkei-kenkyūsha) HIROSE Kazuyuki  独立行政法人宇宙航空研究開発機構, 宇宙科学研究所, 教授 (00280553)
Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Keywords電子デバイス・機器 / 放射線 / ソフトエラー / 熱
Outline of Final Research Achievements

A radiation strike may lead to a malfunction of semiconductor devices. It is often called "soft error", which is triggered by the carriers such as electrons and holes generated in the struck materials. The struck of radiation may also deposit the thermal energy. It increases the local temperature of the struck materials. This temperature increase is studied with the technology of numerical device simulation in conjunction with a newly developed model: an ambient-temperature control model. An analysis with an circuit example in a 200-nm SOI-CMOS technology reveals that the local temperature increase leads to the enlargement of the noise signal. This indicates that the circuit soft-error tolerance estimated without the temperature increase may be higher than it really is. It is, nonetheless, demonstrated that the difference is small, less than 10%.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Research-status Report
  • 2012 Research-status Report
  • Research Products

    (2 results)

All 2015 2014

All Presentation (2 results)

  • [Presentation] 放射線による局所昇温現象を考慮したソフトエラーシミュレーションの適用可能性2015

    • Author(s)
      小林大輔, 伊藤大智, 廣瀬和之
    • Organizer
      第 62 回応用物理学会春季学術講演会
    • Place of Presentation
      東海 大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] 放射線による局所昇温現象を考慮したソフトエラーシミュレーション2014

    • Author(s)
      小林大輔, 伊藤大智, 廣瀬和之
    • Organizer
      第 75 回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌 キャンパス(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report

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Published: 2013-05-31   Modified: 2019-07-29  

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