| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Outline of Final Research Achievements |
Silicon is widely used as semiconductor devices. Recently, the phenomena which can not be explained within the known knowledge are observed under the long term load environment. Those are (1) the fatigue phenomenon, and (2) the modification of fracture toughness at around 100 degree of Celsius. These phenomena should originate in the property of dislocations which determine the mechanical properties of the material. To explain these phenomena, (1) the nature of zigzag shaped shuffle-set dislocations in the middle range of temperatures between 100 and 400 degree of Celsius, and (2) the relation between the transformation of these shuffle-set dislocations and the modification of the fracture toughness are clarified.
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