Nanocrystalline Silicon Films Prepared by Supersonic Free-Jet PVD
| Project/Area Number |
24560891
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Shibaura Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | ナノ結晶材料 / ナノ粒子 / 超音速ガス流 / シリコン半導体 / リチウムイオン2次電池負極 / 薄膜太陽電池 / ナノ結晶 |
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| Outline of Final Research Achievements |
We have investigated nanocrystalline Si films on Oxygen-Free Copper substrate and glass substrate produced with Supersonic Free-Jet PVD (SFJ-PVD). The SFJ-PVD is a technique to deposit nanoparticles with supersonic gas flow and to form a thick coating film. Using SFJ-PVD technique, we obtain a uniform high-density Si coating films. Film crystallinity was analyzed with XRD and Raman spectroscopy. Si films have a poly-nanocrystalline structure with a grain size of 5 - 12nm. High crystallinity has been achieved without substrate heating and post annealing.
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Report
(4 results)
Research Products
(13 results)
