| Project/Area Number |
24560912
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Metal making engineering
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| Research Institution | Shibaura Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 無容器プロプロセス / 均一核生成 / 過冷凝固 / 結晶成長 / 混晶半導体 / シリサイド半導体 / 磁性半導体 / 無容器プロセス / 次世代デバイス |
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| Outline of Final Research Achievements |
It was investigated the relation bewteen undercooling degree and crystal growth of Si and compound semiconductor single crystal formation by using short drop tube procee. 3dTM (Fe,Ni,Co,Mn) and RE (Nd, Gd) elements added Si was prepared from 0 to 10% contained fine particles was analyzed microstructure. Consequently,by adding a small amount of 3dTM and RE elements, and containerless solidifies in the high undercooling state,completely different microstructures were observed with pure Si. Furthermore,it was shown to produce a silicide on the surface of the fine particles and the grain boundary. In addition,the effectiveness of the short drop process for InSb and GaSb binary and Fe added ternary single crystal fine particles formation and continuously to enable the band gap control (InGa) Sb ternary mixed crystal semiconductor particle formation has been clarified.
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