The aluminum nitride by the new technique single crystal growth technology

• Project/Area Number: 24560913
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Metal making engineering
• Research Institution: Meisei University
• Principal Investigator: SEIMIYA Yoshihiro 明星大学, 教育学部, 教授 (20177017)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2013: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000); Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
• Keywords: AlN / 単結晶 / ヒートシンク / ALN / LED / アルミナイトライド / ヒートシンク材料 / 複合材料

Outline of Final Research Achievements

The AL/AlN composite consists of ductile aluminum and hard AlN is a light and high rigidity material for lightening the structural products. We developed a process reduce costs by forming AlN in situ within aluminum in the pressure-less crucible. It is thought that the formation of AlN was promoted by the gas formed from the decomposition of powder oxide film due to deoxidation effect of melted aluminum mass. It was found that the addition of alpha alumina plays an effective role in the combustion synthesis reaction of AlN.
This study, conventional sublimation method or hydride vapor phase only can make deposition of AlN single crystal by using a method of generating a directly AlN from the molten Al above Czochralski method or CZ method new to an application of the and it is intended to be aimed at a single crystal is grown by the technique.

Research Products

• [Journal Article] AlN燃焼合成反応における昇温速度依存性 (2012)
  • Author(s): 小宮良樹、清宮義博
  • Journal Title: 日本金属学会誌 Volume: ７６巻 Pages: 345-348
  • NAID: 10030630897
  • Peer Reviewed