Project/Area Number |
24651128
|
Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
Allocation Type | Single-year Grants |
Research Field |
Nanomaterials/Nanobioscience
|
Research Institution | Tohoku University |
Principal Investigator |
TANIGAKI Katsumi 東北大学, 原子分子材料科学高等研究機構, 教授 (60305612)
|
Project Period (FY) |
2012-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2012: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
|
Keywords | 有機半導体 / M-I接合 / 仕事関数 / 両極性伝導 / 電界発光素子 / 発光素子 / PN接合 / 電界効果トランジスタ / 発光トランジスタ / 電子・ホール |
Research Abstract |
The metal-semiconductor (MS) contact between a metal electrode and an organic semiconductor is generally in the Schottky limit, and the barrier height against carrier injection from an electrode is greatly dependent on the work function of the electrodes. Consequently, metals with air-unstable low workfunctions such as Ca are necessary for electron injection. Here, we report that the Schottky limit can be converted to the Bardeen limit and the carrier injection barrier height can become be independent of the electrode work function. This is exemplified using tetracontane as a surface modification layer on a SiO2 dielectric gate insulator and the unambiguously evidences are given from the experiments of temperature dependence of FETs and photoemission spectroscopy. Based on this finding we demonstrate an air-stable light-emitting organic field-effect transistor using Au electrodes for both hole and electron injection.
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