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Stability of surface contact for hexagonal boron nitride atomic layer

Research Project

Project/Area Number 24651148
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeSingle-year Grants
Research Field Nanomaterials/Nanobioscience
Research InstitutionNational Institute for Materials Science

Principal Investigator

WATANABE Kenji  独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主席研究員 (20343840)

Co-Investigator(Renkei-kenkyūsha) TANIGUCHI Takashi  独立行政法人物質・材料研究機構, ナノスケール物質萌芽ラボ, グループリーダー (80354413)
Project Period (FY) 2012-04-01 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Keywords結晶工学 / ナノ材料 / 半導体物性 / 六方晶窒化ホウ素 / 格子欠陥 / 結晶成長 / 原子層物理 / 電子デバイス / 不純物ドーピング / ラマン散乱分光法
Research Abstract

Hexagonal boron nitride (h-BN) is an insulator which has a 2D-plane crystalline structure composed of nitrogen and boron atoms in sp2 bonding and which shows intense emission in the UV region. To realize the impurity doping for the control of electrical conduction, we studied the stability of both h-BN bulk crystals and atomic layers at high temperature up to 1300 degrees Celsius by employing a micro-Raman spectrograph system with a high temperature furnace. Single layer h-BN starts to oxidize at 700 degrees Celsius and can keep up at the temperature up to 850 degrees Celsius. Bilayer and trilayer BN nanosheets have slightly higher temperatures for oxidation, but the bulk crystals show the stable Raman spectra up to 1300 degrees Celsius.

Report

(3 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Research-status Report
  • Research Products

    (51 results)

All 2014 2013 2012 Other

All Journal Article (32 results) (of which Peer Reviewed: 32 results,  Open Access: 1 results) Presentation (12 results) (of which Invited: 6 results) Book (4 results) Remarks (3 results)

  • [Journal Article] Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS2 films2014

    • Author(s)
      S.Sutar, P.Agnihotri, E.Comfort, T.Taniguchi, K.Watanabe, and L.Ung, Ji
    • Journal Title

      Appl. Phys. Lett

      Volume: 104 Issue: 12 Pages: 122104-122104

    • DOI

      10.1063/1.4870067

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Screening Charged Impurities and Lifting the Orbital Degeneracy in Graphene by Populating Landau Levels2014

    • Author(s)
      A.Luican-Mayer, M.Kharitonov, G.Li, C.-P.Lu, I.Skachko, A.-M.B.Goncalves, K.Watanabe, T.Taniguchi, and E.Y.Andrei
    • Journal Title

      Phys. Rev. Lett

      Volume: 112 Issue: 3 Pages: 36804-36804

    • DOI

      10.1103/physrevlett.112.036804

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Atomic structure of luminescent centers in high-efficiency Ce-doped w-AlN single crystal2014

    • Author(s)
      R.Ishikawa, A.R.Lupini, F.Oba, S.D.Findlay, N.Shibata, T.Taniguchi, K.Watanabe, H.Hayashi, T.Sakai, I.Tanaka, Y.Ikuhara, and S.J.Pennycook
    • Journal Title

      Scientific Reports

      Volume: 4 Issue: 1 Pages: 3778-3778

    • DOI

      10.1038/srep03778

    • Related Report
      2013 Final Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Ballistic Transport in Graphene Grown By Chemical Vapor Deposition2014

    • Author(s)
      V. E. Calado, K. Watanabe, T. Taniguchi 他5名
    • Journal Title

      Appl. Phys. Lett.

      Volume: 104巻 Issue: 2 Pages: 23103-23103

    • DOI

      10.1063/1.4861627

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets2014

    • Author(s)
      L. H. Li, K. Watanabe, T. Taniguchi 他2名
    • Journal Title

      ACS Nano

      Volume: 8巻 Issue: 2 Pages: 1457-1462

    • DOI

      10.1021/nn500059s

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Gate Dependent Raman Spectroscopy of Graphene on Hexagonal Boron Nitride2013

    • Author(s)
      C. Kanokporn, K. Watanabe, T. Taniguchi 他3名
    • Journal Title

      J. Phys. : Condens. Matter

      Volume: 25巻 Issue: 50 Pages: 505304-505304

    • DOI

      10.1088/0953-8984/25/50/505304

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Etched Graphene Single Electron Transistors on Hexagonal Boron Nitride in High Magnetic Fields2013

    • Author(s)
      A. Epping, K. Watanabe, T. Taniguchi 他4名
    • Journal Title

      physica status solidi (b)

      Volume: 250巻 Issue: 12 Pages: 2692-2696

    • DOI

      10.1002/pssb.201300295

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication and Characterization of High-Mobility Graphene p--n--p Junctions Encapsulated by Hexagonal Boron Nitride2013

    • Author(s)
      S. Masubuchi, S. Morikawa, M. Onuki, K. Iguchi, K. Watanabe, T. Taniguchi, and T. Machida,
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 52 Issue: 11R Pages: 110105-110105

    • DOI

      10.7567/jjap.52.110105

    • NAID

      210000143026

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Photovoltaic infrared photoresponse of the high-mobility graphene quan turn Hall system due to cyclotron resonance2013

    • Author(s)
      S. Masubuchi, M. Onuki, M. Arai, T. Yamaguchi, K. Watanabe, T. Taniguchi, T. Machida
    • Journal Title

      Physical Review B

      Volume: 88 Issue: 12 Pages: 121402-121402

    • DOI

      10.1103/physrevb.88.121402

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Etched graphene quantum dots on hexagonal boron nitride,2013

    • Author(s)
      S. Engels, A. Epping, C. Volk, S. Korte, B. Voigtlander, K. Watanabe, T. Taniguchi, S. Trellenkamp, and C. Stampfer
    • Journal Title

      Appl. Phys. Lett.

      Volume: 103 Issue: 7 Pages: 73113-73113

    • DOI

      10.1063/1.4818627

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride2013

    • Author(s)
      F. Forster, A. Molina-Sanchez, S. Engels, A. Epping, K. Watanabe, T. Taniguchi, L. Wirtz, and C. Stampfer
    • Journal Title

      Phys. Rev. B

      Volume: 88 Issue: 8 Pages: 85419-85419

    • DOI

      10.1103/physrevb.88.085419

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Suppression of Thermally Activated Carrier Transport in Atomically Thin MoS2 on Crystalline Hexagonal Boron Nitride Substrates2013

    • Author(s)
      M. Y. Chan, K. Watanabe, T. Taniguchi 他8名
    • Journal Title

      Nanoscale

      Volume: 5巻 Issue: 20 Pages: 9572-9576

    • DOI

      10.1039/c3nr03220e

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron NitrideGraphene Heterostructures2013

    • Author(s)
      G.-H. Lee, K. Watanabe, T. Taniguchi 他11名
    • Journal Title

      ACS Nano

      Volume: 7巻 Issue: 9 Pages: 7931-7936

    • DOI

      10.1021/nn402954e

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Direct Imaging of Charged Impurity Density in Common Graphene Substrates2013

    • Author(s)
      K. M. Burson, K. Watanabe, T. Taniguchi 他5名
    • Journal Title

      Nano Lett.

      Volume: 13巻 Issue: 8 Pages: 3576-3580

    • DOI

      10.1021/nl4012529

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride2013

    • Author(s)
      T. Yamaguchi, Y. Inoue, S. Masubuchi, S. Morikawa, M. Onuki, K. Watanabe, T. Taniguchi, R. Moriya, and T. Machida
    • Journal Title

      Applied Physics Express

      Volume: 6 Issue: 7 Pages: 73001-73001

    • DOI

      10.7567/apex.6.073001

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Insulating Behavior At the Neutrality Point in Single-Layer Graphene2013

    • Author(s)
      F. Amet,K. Watanabe, T. Taniguchi 他2名
    • Journal Title

      Phys. Rev. Lett.

      Volume: 110巻 Issue: 21 Pages: 216601-216601

    • DOI

      10.1103/physrevlett.110.216601

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Optical Thickness Determination of Hexagonal Boron Nitride Flakes2013

    • Author(s)
      D. Golla, K. Watanabe, T. Taniguchi 他3名
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102巻 Issue: 16 Pages: 161906-161906

    • DOI

      10.1063/1.4803041

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride2013

    • Author(s)
      I.Jo, M.T.Pettes, J.Kim, K.Watanabe, T.Taniguchi, Z.Yao, and L.Shi
    • Journal Title

      Nano Letters

      Volume: 13 Issue: 2 Pages: 550-554

    • DOI

      10.1021/nl304060g

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Graphene on Boron Nitride Microwave Transistors Driven By Graphene Nanoribbon Back-Gates2013

    • Author(s)
      C. Benz, K. Watanabe, T. Taniguchi 他6名
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102巻 Issue: 3 Pages: 335-335

    • DOI

      10.1063/1.4788818

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Optical Probing of the Electronic Interaction Between Graphene and Hexagonal Boron Nitride2013

    • Author(s)
      G. Ahn, K. Watanabe, T. Taniguchi 他5名
    • Journal Title

      ACS Nano

      Volume: 7巻 Issue: 2 Pages: 1533-1541

    • DOI

      10.1021/nn305306n

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Slow Gold Adatom Diffusion on Graphene : Effect of Silicon Dioxide and Hexagonal Boron Nitride Substrates2013

    • Author(s)
      L. Liu, K. Watanabe, T. Taniguchi 他7名
    • Journal Title

      The Journal of Physical Chemistry B

      Volume: 117巻 Issue: 16 Pages: 4305-4312

    • DOI

      10.1021/jp305521g

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Biaxial Compressive Strain Engineering in Graphene/boron Nitride Heterostructures2012

    • Author(s)
      W. Pan, K. Watanabe, T. Taniguchi 他7名
    • Journal Title

      Scientific Reports

      Volume: 2巻 Issue: 1 Pages: 893-893

    • DOI

      10.1038/srep00893

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electron Flow in Split-Gated Bilayer Graphene2012

    • Author(s)
      S. Droscher, K. Watanabe, T. Taniguchi 他3名
    • Journal Title

      New Journal of Physics

      Volume: 14巻 Issue: 10 Pages: 103007-103007

    • DOI

      10.1088/1367-2630/14/10/103007

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Negligible Environmental Sensitivity of Graphene in a Hexagonal Boron Nitride/graphene/h-Bn Sandwich Structure2012

    • Author(s)
      L. Wang, K. Watanabe, T. Taniguchi 他4名
    • Journal Title

      ACS Nano

      Volume: 6巻 Issue: 10 Pages: 9314-9319

    • DOI

      10.1021/nn304004s

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Chemical Vapor Deposition of 12c Isotopically Enriched Polycrystalline Diamond2012

    • Author(s)
      T. Teraji, K. Watanabe, T. Taniguchi 他4名
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 51巻 Issue: 9R Pages: 90104-90104

    • DOI

      10.1143/jjap.51.090104

    • NAID

      210000072771

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Negligible Environmental Sensitivity of Graphene in a Hexagonal Boron Nitride/Graphene/h-BN Sandwich Structure2012

    • Author(s)
      L. Wang, Z. Chen, C. R. Dean, T. Taniguchi, K. Watanabe, L. E. Brus and J. Hone
    • Journal Title

      ACS Nano

      Volume: ACS Nano Issue: 9 Pages: 9314-9319

    • DOI

      10.1021/nl301986q

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Angle-Dependent Carrier Transmission in Graphene P-N Junctions2012

    • Author(s)
      S. Sutar, K. Watanabe, T. Taniguchi 他3名
    • Journal Title

      Nano Letters

      Volume: 12巻 Issue: 9 Pages: 4460-4464

    • DOI

      10.1021/nl3011897

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices2012

    • Author(s)
      A. Gustavo F.Garcia, M.Neumann, F.Amet, J.R.Williams, K.Watanabe, T.Taniguchi,
    • Journal Title

      Nano Lett

      Volume: 12 Issue: 9 Pages: 4449-4454

    • DOI

      10.1021/nl3011726

    • Related Report
      2013 Final Research Report 2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Electronic Compressibility of Layer-Polarized Bilayer Graphene2012

    • Author(s)
      A. F. Young, K. Watanabe, T. Taniguchi 他7名
    • Journal Title

      Phys. Rev. B

      Volume: 85巻 Issue: 23 Pages: 235458-235458

    • DOI

      10.1103/physrevb.85.235458

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Graphene Based Heterostructures2012

    • Author(s)
      C. R. Dean, K. Watanabe, T. Taniguchi 他7名
    • Journal Title

      Solid State Commun.

      Volume: 152巻 Issue: 15 Pages: 1275-1282

    • DOI

      10.1016/j.ssc.2012.04.021

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Graphene Growth on H-Bn By Molecular Beam Epitaxy2012

    • Author(s)
      J. M. Garcia, K. Watanabe, T. Taniguchi 他10名
    • Journal Title

      Solid State Commun.

      Volume: 152巻 Issue: 12 Pages: 975-978

    • DOI

      10.1016/j.ssc.2012.04.005

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Large Variations of the Raman Signal in the Spectra of Twisted Bilayer Graphene on a Bn Substrate2012

    • Author(s)
      M. Kalbac, K. Watanabe, T. Taniguchi 他5名
    • Journal Title

      The Journal of Physical Chemistry Letters

      Volume: 3巻 Issue: 6 Pages: 796-799

    • DOI

      10.1021/jz300176a

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Presentation] 高圧合成法による高純度窒化ホウ素単結晶研究の現状と新しい応用展開2013

    • Author(s)
      渡邊賢司
    • Organizer
      第15回応用物理学会プラズマエレクトロニクス分科会新領域研究会
    • Place of Presentation
      名古屋市、愛知県
    • Year and Date
      2013-11-22
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] 高温高圧法により育成した六方晶窒化ホウ素単結晶劈開面のカソードルミネッセンス像観察2013

    • Author(s)
      渡邊賢司
    • Organizer
      第27回ダイヤモンドシンポジウム
    • Place of Presentation
      南埼玉郡、埼玉県
    • Year and Date
      2013-11-21
    • Related Report
      2013 Final Research Report
  • [Presentation] Synthesis of high purity hBN single crystals by using solvent growth process2013

    • Author(s)
      谷口尚
    • Organizer
      5th International Conf on Recent Progress in Graphene Research
    • Place of Presentation
      東京都
    • Year and Date
      2013-09-11
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Luminescence image of cleaved crystal in hexagonal boron nitride grown by temperature gradient method2013

    • Author(s)
      渡邊賢司
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      守山市,滋賀県
    • Year and Date
      2013-07-11
    • Related Report
      2013 Final Research Report
  • [Presentation] Optical Properties of Boron Nitride Single Crystals2013

    • Author(s)
      Kenji Watanabe
    • Organizer
      CLEO-PR 2013
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2013-07-01
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Luminescence image of cleaved crystal in hexagonal boron nitride grown by temperature gradient method2013

    • Author(s)
      渡邊賢司、谷口尚
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖,滋賀県守山市
    • Related Report
      2013 Annual Research Report
  • [Presentation] 高温高圧法により育成した六方晶窒化ホウ素単結晶劈開面のカソードルミネッ センス像観察2013

    • Author(s)
      渡邊賢司、谷口尚
    • Organizer
      第27回ダイヤモンドシンポジウム
    • Place of Presentation
      日本工業大学,埼玉県埼玉郡宮代町
    • Related Report
      2013 Annual Research Report
  • [Presentation] Optical Properties of Boron Nitride Single Crystals2013

    • Author(s)
      Kenji Watanabe, Takashi Taniguchi
    • Organizer
      CLEO-PR 2013
    • Place of Presentation
      Kyoto international conferene center,Kyoto
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] 高圧合成法による高純度窒化ホウ素単結晶研究の現状と新しい応用展開2013

    • Author(s)
      渡邊賢司、谷口尚
    • Organizer
      第15回応用物理学会プラズマエレクトロニクス分科会新領域研究会
    • Place of Presentation
      KDX 名古屋駅前ビル名城大学名駅サテライト
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Synthesis of high purity hBN single crystals by using solvent growth p rocess2013

    • Author(s)
      谷口尚、渡邊賢司
    • Organizer
      5th International Conf on Recent Progress in Graphene Research
    • Place of Presentation
      東京工業大学 大岡山キャンパス,東京
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Near-band edge optical properties of hexagonal boron nitride2012

    • Author(s)
      A.Pierret
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      Sapporo、Japan
    • Year and Date
      2012-10-17
    • Related Report
      2013 Final Research Report
  • [Presentation] Near-band edge optical properties of hexagonal boron nitride2012

    • Author(s)
      A. Pierret
    • Organizer
      IWN2012
    • Place of Presentation
      札幌
    • Related Report
      2012 Research-status Report
  • [Book] サイエンス誌に載った日本人研究者2013、2次元的物質との1次元的電気接触2014

    • Author(s)
      渡邊賢司、谷口尚
    • Total Pages
      69
    • Publisher
      AAAS
    • Related Report
      2013 Final Research Report
  • [Book] 脚光を浴びる高純度hBN、82巻12号2013

    • Author(s)
      谷口尚、渡邊賢司
    • Publisher
      OYO BUTURI
    • Related Report
      2013 Final Research Report
  • [Book] サイエンス誌に載った日本人研究者2011、六方晶窒化ホウ素基板により新しいグラフェンの特性を発見2012

    • Author(s)
      渡邊賢司、谷口尚
    • Total Pages
      26
    • Publisher
      AAAS
    • Related Report
      2013 Final Research Report
  • [Book] グラフェンの特性を活かす六方晶窒化ホウ素基板~六方晶窒化ホウ素応用の進展開~NEW DIAMOND(Vol.104,No.1)2012

    • Author(s)
      渡邊賢司、谷口尚
    • Publisher
      (株)オーム社
    • Related Report
      2013 Final Research Report
  • [Remarks]

    • URL

      http://www.nims.go.jp/personal/BN_research/index-j_BNR.html

    • Related Report
      2013 Final Research Report
  • [Remarks] 窒化ホウ素の研究

    • URL

      http://www.nims.go.jp/personal/BN_research

    • Related Report
      2013 Annual Research Report
  • [Remarks] 窒化ホウ素の研究

    • URL

      http://www.nims.go.jp/personal/BN_research/

    • Related Report
      2012 Research-status Report

URL: 

Published: 2013-05-31   Modified: 2019-07-29  

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