Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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Research Abstract |
The purpose of this research is to obtain guideline for the development of two-dimensionally-uniform sputtering system using mirowave plasma production. Through this research, low pressure plasma production using microwave power is successfully realized. Furthermore, by applying RF power to the microwave plasma, uniform dielectric sputtering is realized with 10 cm square area. This is innovative result that cannot be realized by conventional sputtering system that utilize magnetic field. The result obtained by this project can be applied to various electronic device manufacturing.
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