Interface doping on organic thin film transistors exploring spin related phenomena
Project/Area Number |
24655163
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Single-year Grants |
Research Field |
Functional materials/Devices
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Research Institution | Hirosaki University (2013) Tohoku University (2012) |
Principal Investigator |
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Co-Investigator(Renkei-kenkyūsha) |
SAITOH Eiji 東北大学, 金属材料研究所, 教授 (80338251)
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Project Period (FY) |
2012-04-01 – 2014-03-31
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Project Status |
Completed (Fiscal Year 2013)
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Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
|
Keywords | 走査トンネル顕微鏡 / 光電子顕微鏡 / 有機薄膜 / 有機半導体 |
Research Abstract |
An organic growth system with a photoelectron emission microscope has been attached to a four-probe scanning tunneling microscope, and an electron beam controller has been installed to the photoelectron emission microscope to improve the performance. Interface formation process between silicon oxide and organic material has been investigated in detail, finding some novel knowledge on nucleation processes, which is a key factor to improve the organic device property.
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Report
(3 results)
Research Products
(13 results)
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[Journal Article] Interface induced inverse spin Hall effect in bismuth/permalloy bilayer2012
Author(s)
Dazhi Hou, Z. Qiu, K. Harii, Y. Kajiwara, K. Uchida, Y. Fujikawa, H. Nakayama, T. Yoshino, T. An, K. Ando, Xiaofeng Jin, and E. Saitoh
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Journal Title
Appl. Phys. Lett
Volume: 101
Pages: 42403-42403
Related Report
Peer Reviewed
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