| Project/Area Number |
24655173
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Functional materials/Devices
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| Research Institution | Kyoto Institute of Technology |
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Principal Investigator |
HOTTA Shu 京都工芸繊維大学, 工芸科学研究科, 教授 (00360743)
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| Co-Investigator(Renkei-kenkyūsha) |
YAMAO Takeshi 京都工芸繊維大学, 工芸科学研究科, 准教授 (10397606)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2013: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 有機半導体 / （チオフェン/フェニレン）コオリゴマー / 金属酸化物半導体 / 発光トランジスタ / 浮遊ゲート / 移動度 / 有機結晶 / 電子注入極 / 正孔注入極 / ホール注入極 / AZO |
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| Outline of Final Research Achievements |
We have developed organic light-emitting transistors having an aluminum-doped zinc oxide (AZO) layer as a floating gate electrode. We observed bright light emissions under low applied voltages (~10 V) from devices in which the AZO and organic semiconductor layers were deposited in this order on a gate insulator layer. The devices having the organic layer sandwiched between the AZO and insulator layers indicated a high carrier mobility of 113 cm2/Vs along with light emission under low applied voltages (< 10 V).
We have used an organic crystal for the emission layer of the transistor. At first, we needed to apply voltages more than 100 V to the device for light emission. As a result of developing methods of etching of AZO layers, and fabrication and modification of carrier injection electrodes, we achieved the bright light emissions under applied voltages less than 100 V.
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