| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Research Abstract |
In this study, we prepared a thin film of poly(3-hexylthiophene) doped with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane for a p-type thermoelectric device and successfully obtained a power factor of 30W/mK2 after thermal aging. XRD analysis clarified that a high crystalline structure of P3HT was maintained even after the doping, leading to high PF. In addition, we prepared a thin film of PCBM doped with N-DMBI for an n-type thermoelectric device. Further, we prepared a prototype p-n module having four p-n element pairs, resulted in the output power of 1.2 nW with the temperature gradient of 5 deg.
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