Is it possible to grow InGaN ternary alloy by HVPE?
| Project/Area Number |
24656011
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
KOUKITU Akinori 東京農工大学, 大学院・工学研究院, 教授 (10111626)
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| Project Period (FY) |
2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
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| Keywords | 窒化物半導体 / InGaN, HVPE成長,原料分子制御 / 気相成長 / エピタキシャル成長 / InGaN / HVPE成長 / 原料分子制御 |
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| Research Abstract |
On the study, InGaNof the key material for Energy-saving society could be grown using a new growth system, where high quality growth of InGaN and high growth rate were realized.
The wavelength emitted from InGaN can be varied from 365nm to 1900nm by controlling the solid In composition in InGaN alloy. Therefore, InGaN has attracted attention as a high-efficiency LED, LD and solar cell. However, it is difficult to grow InGaN of In >20%. There is no example of successful high quality InGaN. It was found that InGaN ofIn > 20% could be grown by a new growth system.
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Report
(2 results)
Research Products
(17 results)
