A high efficiency III nitride solar cell with graded composition top layer

• Project/Area Number: 24656019
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Aichi Institute of Technology
• Principal Investigator: SAWAKI Nobuhiko 愛知工業大学, 工学部, 教授 (70023330)
• Co-Investigator(Renkei-kenkyūsha): HONDA Yoshio 名古屋大学, 大学院工学研究科, 准教授 (60362274)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
• Keywords: 窒化物半導体 / 太陽電池 / ビルトイン電界効果 / 分極電界 / 格子空孔 / 黄色帯発光 / インパクトイオン化 / 炭素ドーピング / 電界効果 / ヘテロ構造 / ｐｎ接合 / 分極電荷 / 格子欠陥 / 結晶欠陥 / トランスポート / ピエゾ電界

Outline of Final Research Achievements

Numerical studies has been done to improve the III-nitride solar cell performances. It was shown that, by adopting a graded composition p-type top layer in a single p-n junction solar cell, the conversion efficiency is enhanced up to 60 times by the internal built-in electric field which enhances the drift motion of photo-excited carriers. Optimum p-type top layer was estimated to be one thirds of the carrier diffusion length. In order to overcome the polarization self-compensation effects in a real device, reduction of Ga vacancy is essential to realize the p-type conduction in the graded layer on (0001) surface.

Research Products

• [Journal Article] Resonant Raman and FTIR spectra of carbon doped GaN (2015)
  • Author(s): S.Ito, H.Kobayashi, K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
  • Journal Title: J. Crystal Growth Volume: 414 Pages: 56-61
  • DOI: 10.1016/j.jcrysgro.2014.11.024
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Nature of yellow luminescence band in GaN grown on Si substrate (2014)
  • Author(s): S.Ito, T.Nakakita, N.Sawaki, M.Irie, T.Hikosaka, Y.Honda, M.Yamaguchi, and H.Amano
  • Journal Title: Jpn. J. Appl. Phys. Volume: 53 Issue: 11S Pages: 11RC02-11RC02
  • DOI: 10.7567/jjap.53.11rc02
  • NAID: 210000144631
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy (2013)
  • Author(s): J.Y.Kim, G.S.Lee, S.G.Jung, M.A.Park, M.J.Shin, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S.W.Kim, H.S.Lee, H.S.Kang, H.S.Jeon, and N.Sawaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 52 Issue: 11S Pages: 11NG03-11NG03
  • DOI: 10.7567/jjap.52.11ng03
  • NAID: 210000143121
  • Peer Reviewed
• [Journal Article] Defect generation and annihilation in GaN grown on patterned silicon substrate (2013)
  • Author(s): N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Journal Title: Proc. SPIE Volume: 8625 Pages: 6-6
  • DOI: 10.1117/12.2002738
• [Journal Article] Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots (2013)
  • Author(s): M.Kim, M.J.Shin, D.Gwon, H.S.Ahn, S.N.Yi, P.S.Kim, S.C.Yoon, C.Lee, J.Park, K.Shin, D.H.Ha, and N.Sawaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 52 Issue: 1S Pages: 01AD02-01AD02
  • DOI: 10.7567/jjap.52.01ad02
  • NAID: 210000141765
  • Peer Reviewed
• [Journal Article] Fabrication of AlGaN-based vertical light-emitting diodes (2012)
  • Author(s): S.M.Bae, H.S.Jeon, G.S.Lee, S-G.Jung, K.H.Kim, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S-W.Kim, S.H.Cheon, H-J.Ha and N.Sawaki
  • Journal Title: J. Ceramic Processing Research Volume: 13
  • Peer Reviewed
• [Journal Article] Characterization of GaN on GaN LED by HVPE method (2012)
  • Author(s): S-G.Jung, H.S.Jeon, G.S.Lee, S.M.Bae, K-H.Kim, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S-W.Kim, S.H.Cheon, H.J.Ha and N.Sawaki
  • Journal Title: J. Ceramic Processing Research Volume: 13
  • Peer Reviewed
• [Presentation] Effect of annealing on the defect related emission in GaN grown on Si substrate (2015)
  • Author(s): H.Kobayashi, T.Yagi, R.Tanabe, T.Kanematsu,H.Iwata, N.Sawaki, M.Irie, Y.Honda, and H.Amano
  • Organizer: APWS 2015
  • Place of Presentation: The K Seoul Hotel (Seoul, Korea)
  • Year and Date: 2015-05-17 – 2015-05-20
• [Presentation] Improvement of crystalline quality of GaN on Si by an AlInN nucleation layer (2015)
  • Author(s): T.Yagi, R.Tanabe, T.Kanematsu, H.Kobayashi, N.Sawaki, M.Irie, Y.Honda, and H.Amano
  • Organizer: ISPlasma 2015
  • Place of Presentation: Nagoya University(名古屋市千種区)
  • Year and Date: 2015-03-26 – 2015-03-31
• [Presentation] Optical spectra and yellow luminescence in C doped GaN (2015)
  • Author(s): H.Kobayashi, N.Sawaki, K.Yamashitta, T.Hikosaka, Y.Honda, and H.Aman
  • Organizer: ISPlasma 2015
  • Place of Presentation: Nagoya University(名古屋市千種区)
  • Year and Date: 2015-03-26 – 2015-03-31
• [Presentation] Characteristics of high-quality AlN thick film grown on c-sapphire substrates by HVPE method (2015)
  • Author(s): G.S.Lee, H.S.Jeon, C.M.Lee, C.B.Lee, S.N.Yi, M.Yang, H.S.Ahn, S.W.Kim, Y.M.Yu, and N.Sawaki
  • Organizer: ISPlasma 2015
  • Place of Presentation: Nagoya University(名古屋市千種区)
  • Year and Date: 2015-03-26 – 2015-03-31
• [Presentation] 炭素ドープ半極性(1-101)GaN の光学特性 (2014)
  • Author(s): 小林宙主、澤木宣彦、山下康平、彦坂年輝、本田善央、天野浩
  • Organizer: 平成26年電気電子情報関係学会東海支部連合大会
  • Place of Presentation: 中京大学（名古屋市天白区）
  • Year and Date: 2014-09-08 – 2014-09-09
• [Presentation] Resonant Raman and FTIR spectra of carbon doped GaN (2014)
  • Author(s): S.Ito, K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
  • Organizer: ICMOVPE 2014
  • Place of Presentation: EPFL(Lousanne, Swiss)
  • Year and Date: 2014-07-13 – 2014-07-18
• [Presentation] Nature of yellow luminescence band in high quality GaN (2014)
  • Author(s): S.Ito, T.Nakakita, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: ISPlasma2014
  • Place of Presentation: Nagoya
• [Presentation] FTIR spectra in a heavily carbon doped (0001)GaN (2014)
  • Author(s): K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
  • Organizer: ISPlasma2014
  • Place of Presentation: Nagoya
• [Presentation] Growth of high quality GaN on (111)Si using AlN:In nucleation layer (2013)
  • Author(s): S.Ito, T.Nakagita, S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: 6th Asia-Pacific Workshop on Widegap Semiconductors
  • Place of Presentation: Taipei
• [Presentation] Coalescence and generation of stacking faults in a (1-101)GaN grown on a patterned (001)Si substrate (2013)
  • Author(s): T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: 6th Asia-Pacific Workshop on Widegap Semiconductors
  • Place of Presentation: Taipei
• [Presentation] Epitaxial relationship and nano-structures at GaN/Si interface (2013)
  • Author(s): N.Sawaki
  • Organizer: EMN2013- Open Access 2013
  • Place of Presentation: Chengdu
  • Invited
• [Presentation] 半極性(1-101)GaN における積層欠陥の振る舞い (2013)
  • Author(s): 中北太平、伊藤翔悟、岩田博之、澤木宣彦、本田善央、山口雅史、天野浩
  • Organizer: 電気関係学会東海支部学術講演会
  • Place of Presentation: 静岡大学
• [Presentation] Si基板上GaN/AlInNエピタキシャル膜のPLスペクトル (2013)
  • Author(s): 伊藤翔悟、中北太平、澤木宣彦、入江将嗣、本田善央、山口雅史、天野浩
  • Organizer: 電気関係学会東海支部学術講演会
  • Place of Presentation: 静岡大学
• [Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate (2013)
  • Author(s): N.Sawaki, T.Nakagita, S.Ito, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: SPIE-OPTO 2013
  • Place of Presentation: San Francisco (USA)
• [Presentation] A high efficiency InGaN solar cell with graded composition p-InGaN top layer (2013)
  • Author(s): T.Fujisawa and N.Sawaki,
  • Organizer: ISPlasama 2013
  • Place of Presentation: Nagoya (Japan)
• [Presentation] 傾斜組成トップ層によるInGaN太陽電池の高効率化 (2012)
  • Author(s): 藤澤知樹，澤木宣彦
  • Organizer: 電気関係学会東海支部学術講演会
  • Place of Presentation: 豊橋市、日本
• [Remarks] 愛知工業大学学術情報リポジトリ
  • URL: http://repository.aitech.ac.jp/dspace/
• [Remarks] グリーンエネルギー研究拠点
  • URL: http://so-ken.aitech.ac.jp/soken/green/index.html
• [Remarks] 愛知工業大学研究報告
  • URL: http://www.ait.ac.jp/others/kenkyu.html